MT48H8M16LFB4-8:J Micron Technology Inc, MT48H8M16LFB4-8:J Datasheet - Page 66

• Manufacturer Part Number: MT48H8M16LFB4-8:J
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT48H8M16LFB4-8:J

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 36: READ With Auto Precharge Interrupted by a WRITE
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Internal
States
Command
Note:
Address
Bank m
Bank n
DQM
CLK
DQ
1
1. DQM is HIGH at T2 to prevent D
active
Page
READ - AP
Bank n,
Bank n
T0
Col a
READ with burst of 4
Page active
NOP
CL = 3 (bank n)
T1
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
T2
NOP
66
T3
D
NOP
OUT
OUT
a + 1 from contending with D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
D
Interrupt burst, precharge
IN
WRITE with burst of 4
T5
NOP
D
t
RP - bank n
IN
PRECHARGE Operation
T6
NOP
D
IN
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IN
d at T4.
T7
NOP
D
t WR - bank m
Don’t Care
IN
Write-back
Idle