MT48H8M16LFB4-8:J Micron Technology Inc, MT48H8M16LFB4-8:J Datasheet - Page 75

• Manufacturer Part Number: MT48H8M16LFB4-8:J
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT48H8M16LFB4-8:J

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 46: Single WRITE Without Auto Precharge
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Command
BA0, BA1
Address
DQM
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 1 and the WRITE burst is followed by a manual PRECHARGE.
Disable auto precharge
t CL
t CMS
t DS
Column m
Bank
WRITE
T2
D
t CMH
IN
t DH
t CH
t WR
T3
NOP
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
75
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Single bank
PRECHARGE
All banks
Bank
T5
T6
NOP
t RP
PRECHARGE Operation
©2008 Micron Technology, Inc. All rights reserved.
Bank
Row
ACTIVE
T7
T8
NOP
Don’t Care