MT41J512M4HX-125:D Micron Technology Inc, MT41J512M4HX-125:D Datasheet - Page 55

• Manufacturer Part Number: MT41J512M4HX-125:D
• Description: IC DDR3 SDRAM 2GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J512M4HX-125:D

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (512M x 4)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 37:
Figure 23:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D3.fm - Rev G 2/09 EN
Measured Parameter
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
t
t
AONPD
AOFPD
t
t
t
AON
ADC
AOF
t AON
Reference Settings for ODT Timing Measurements
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL on
t
AON and
Notes:
V
t
SS
AOF Definitions
1. Assume an RZQ of 240Ω (±1%) and that proper ZQ calibration has been performed at a sta-
Q
ble temperature and voltage (V
R
TT
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/12 (20Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
RZQ/4 (60Ω)
_
NOM
t AON
T
SW
Setting
1
End point: Extrapolated point at V
T
SW
2
V
CK
CK#
SW
1
t AOF
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL off
V
SW
R
2
55
RZQ/2 (120Ω)
TT
DD
_
WR
Q = V
n/a
n/a
n/a
n/a
n/a
n/a
n/a
n/a
V
Setting
SW
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SS
DD
Q
, V
SS
V
SW
Q = V
1
t AOF
2Gb: x4, x8, x16 DDR3 SDRAM
End point: Extrapolated point at V
SS
T
SW
).
1
T
SW
100mV
100mV
100mV
100mV
200mV
50mV
50mV
50mV
50mV
V
1
SW
1
©2006 Micron Technology, Inc. All rights reserved.
ODT Characteristics
V
RTT
_
NOM
V
DD
V
SS
Q/2
Q
100mV
200mV
100mV
200mV
100mV
200mV
100mV
200mV
300mV
RTT
V
SW
_
NOM
2