MT36HTF51272FDZ-80EH1N8 Micron Technology Inc, MT36HTF51272FDZ-80EH1N8 Datasheet - Page 8

• Manufacturer Part Number: MT36HTF51272FDZ-80EH1N8
• Description: MODULE DDR2 SDRAM 4GB 240FDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT36HTF51272FDZ-80EH1N8

• Memory Type: DDR2 SDRAM
• Memory Size: 4GB
• Speed: 800MT/s
• Features: -
• Package / Case: 240-FBDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 6: I
Table 7: I
Table 8: I
Serial Presence-Detect
Table 9: Serial Presence-Detect EEPROM DC Operating Conditions
PDF: 09005aef8409299f
htf36c512x72fdz.pdf - Rev. A 06/10 EN
Symbol
I
I
I
Symbol
I
I
Total power
Symbol
I
I
Total power
Parameter/Condition
EEPROM and AMB supply voltage
Input high voltage: Logic 1; all inputs
Input low voltage: Logic 0; all inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current
Power supply current, READ: SCL clock frequency = 100 kHz
Power supply current, WRITE: SCL clock frequency = 100 kHz
DD_TRAINING
DD_IBIST
DD_EI
CC
DD
CC
DD
DD
DD
DD
Conditions (Continued)
Specifications – 4GB DDR2-667
Specifications – 4GB DDR2-800
I
I
DD_IDLE_0
DD_IDLE_0
2600
2680
TBD
TBD
TBD
9.2
OUT
Note:
Note:
IN
= 3mA
OUT
= GND to V
Condition
Training: Primary and secondary channels enabled; 100% toggle on all channel lanes;
DRAMs idle; 0% bandwidth; CKE HIGH; Command and address lines stable; DDR2 SDRAM
clock active
IBIST over all IBIST modes: DRAM idle (0% bandwidth); Primary channel enabled; Secon-
dary channel enabled; CKE HIGH; Command and address lines stable; DDR2 SDRAM clock active
Electrical idle: DRAM idle (0% bandwidth); Primary channel disabled; Secondary channel
disabled; CKE LOW; Command and address lines floated; DDR2 SDRAM clock active; ODT and
CKE driven LOW
= GND to V
1. Actual test conditions may vary from published JEDEC test conditions.
1. Total power is based on maximum voltage levels, I
I
I
DD_IDLE_1
DD_IDLE_1
3400
2680
10.4
TBD
TBD
TBD
DD
DD
I
I
DD_ACTIVE_1
DD_ACTIVE_1
TBD
TBD
TBD
3900
2612
11.1
4GB (x72, QR) 240-Pin DDR2 SDRAM FBDIMM
I
DD_ACTIVE_2
8
I
DD_ACTIVE_2
TBD
TBD
TBD
3700
2680
10.9
Symbol
V
I
DDSPD
V
I
V
CCW
V
I
I
CCR
I
LO
SB
LI
OL
IH
IL
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I
DD_TRAINING
I
DD_TRAINING
TBD
TBD
TBD
V
4000
2580
11.4
DDSPD
Min
–0.6
0.10
0.05
1.6
0.4
CC
3
–
2
× 0.7
at 1.575V and I
I
Serial Presence-Detect
DD_IBIST
TBD
TBD
TBD
I
DD_IBIST
4500
2680
12.2
© 2010 Micron Technology, Inc. All rights reserved.
V
V
DDSPD
DDSPD
Max
3.6
0.4
DD
3
3
4
1
3
I
DD_EI
TBD
TBD
TBD
+ 0.5
× 0.3
I
2500
at 1.9V.
DD_EI
560
5
Units
Units
Units
mA
mA
mA
mA
µA
µA
µA
mA
mA
W
V
V
V
V
W