NX3V1G66GW,125 NXP Semiconductors, NX3V1G66GW,125 Datasheet - Page 5

• Manufacturer Part Number: NX3V1G66GW,125
• Description: IC SWITCH SPST 5TSSOP
• Manufacturer: NXP Semiconductors

Specifications of NX3V1G66GW,125

• Package / Case: 6-TSSOP (5 lead), SC-88A, SOT-353
• Function: Switch
• Circuit: 1 x SPST- NO
• On-state Resistance: 250 mOhm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.4 V ~ 4.3 V
• Current - Supply: 150nA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Switch Configuration: SPST
• On Resistance (max): 0.8 Ohm (Typ) @ 1.4 V
• On Time (max): 42 ns @ 1.6 V
• Off Time (max): 22 ns @ 1.6 V
• Supply Voltage (max): 4.3 V
• Supply Voltage (min): 1.4 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4760-2; 935286667125; NX3V1G66GW,125; NX3V1G66GW-G; NX3V1G66GW-G

NXP Semiconductors
Table 7.
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Table 8.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see
NX3V1G66
Product data sheet
Symbol Parameter
C
C
C
Symbol
R
Fig 5.
I
S(OFF)
S(ON)
ON(peak)
input
capacitance
OFF-state
capacitance
ON-state
capacitance
V
Test circuit for measuring OFF-state leakage
current
V
Parameter
ON resistance
(peak)
I
Static characteristics
Resistance R
IL
= 0.3 V or V
V I
11.1 Test circuits
11.2 ON resistance
nE
nZ
CC
 0.3 V; V
ON
Conditions
V
CC
Conditions
V
I
GND
SW
I
V
V
V
V
V
= GND to V
CC
CC
CC
CC
CC
= 100 mA; see
O
…continued
= V
nY
= 1.4 V
= 1.65 V
= 2.3 V
= 2.7 V
= 4.3 V
CC
I
S
 0.3 V or 0.3 V.
All information provided in this document is subject to legal disclaimers.
001aag488
CC
;
V O
Rev. 6 — 21 December 2010
Figure 7
Min
Fig 6.
Low-ohmic single-pole single-throw analog switch
T
-
-
-
amb
Min
T
-
-
-
-
-
amb
= 40 C to +85 C T
Typ
205
1.0
V
Test circuit for measuring ON-state leakage
current
70
= 25 C
I
Typ
0.25
0.25
= 0.3 V or V
0.8
0.5
0.3
V
IH
[1]
Max
V I
I
-
-
-
S
Max
0.45
0.45
1.9
0.8
0.5
CC
nE
nZ
 0.3 V; V
T
Min
amb
amb
-
-
-
V
CC
Min
= 40 C to +125 C
GND
= 40 C to +125 C Unit
-
-
-
-
-
O
= open circuit.
NX3V1G66
(85 C)
Max
nY
Figure 8
-
-
-
001aag489
© NXP B.V. 2010. All rights reserved.
V O
(125 C)
Max
2.1
0.9
0.6
0.5
0.5
Max
to
-
-
-
Figure
5 of 18
Unit
pF
pF
pF





14.