SI4705-D60-GU Silicon Laboratories Inc, SI4705-D60-GU Datasheet - Page 5
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SI4705-D60-GU
Manufacturer Part Number
SI4705-D60-GU
Description
IC FM RADIO TUNER 20-QFN
Manufacturer
Silicon Laboratories Inc
Series
-r
Datasheet
1.SI4705-D60-EVB.pdf
(40 pages)
Specifications of SI4705-D60-GU
Frequency
64MHz ~ 108MHz
Sensitivity
-
Data Rate - Maximum
-
Modulation Or Protocol
FM
Applications
General Purpose
Current - Receiving
18.5mA
Data Interface
PCB, Surface Mount
Memory Size
-
Antenna Connector
PCB, Surface Mount
Features
-
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-20°C ~ 85°C
Package / Case
24-SSOP (0.154", 3.90mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4705-D60-GUR
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
SI4705-D60-GUR
Manufacturer:
SILICON LABS/芯科
Quantity:
20 000
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
Analog Supply Voltage
Digital and I/O Supply Voltage
Power Supply Powerup Rise Time
Interface Power Supply Powerup Rise Time
Ambient Temperature
Notes:
Analog Supply Voltage
Digital and I/O Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. All minimum and maximum specifications apply across the recommended operating conditions. Typical values apply at
2. SSOP devices operate down to 2 V at 25 °C. See Section “4.21. 2 V Operation (SSOP Only)” for details.
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The Si4704/05-D60 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2
3. For input pins DFS, SCLK, SEN, SDIO, RST, RCLK, GPO1, GPO2, GPO3, and DCLK.
4. At RF input pin FMI and LPI.
V
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
kV HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
A
= 3.3 V and 25 C unless otherwise stated.
3
3
Parameter
4
Parameter
1,2
Symbol
T
V
Symbol
V
T
V
V
V
I
STG
DDRISE
OP
IORISE
IN
IN
A
D
Rev. 1.0
V
V
T
1
A
D
A
Test Condition
–0.3 to (V
–0.5 to 5.8
–0.5 to 3.9
–55 to 150
–40 to 95
Value
0.4
10
IO
+ 0.3)
2.7
1.62
Min
–20
Si4704/05-D60
10
10
2
Typ
25
—
—
—
—
Max
5.5
3.6
85
—
—
Unit
mA
V
C
C
V
V
V
pk
Unit
µs
µs
C
V
V
5