NX3L1G53GM,125 NXP Semiconductors, NX3L1G53GM,125 Datasheet - Page 7

IC SWITCH SPDT 8XQFN

NX3L1G53GM,125

Manufacturer Part Number
NX3L1G53GM,125
Description
IC SWITCH SPDT 8XQFN
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NX3L1G53GM,125

Package / Case
8-XQFN
Function
Switch
Circuit
1 x SPDT
On-state Resistance
500 mOhm
Voltage Supply Source
Single Supply
Voltage - Supply, Single/dual (±)
1.4 V ~ 4.3 V
Current - Supply
150nA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Switch Configuration
SPDT
On Resistance (max)
1.6 Ohm (Typ) @ 1.4 V
On Time (max)
42 ns @ 1.6 V
Off Time (max)
19 ns @ 1.6 V
Supply Voltage (max)
4.3 V
Supply Voltage (min)
1.4 V
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4758-2
935286015125
NX3L1G53GM,125
NX3L1G53GM-G
NX3L1G53GM-G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NX3L1G53GM,125
Manufacturer:
Intersil
Quantity:
754
NXP Semiconductors
NX3L1G53_4
Product data sheet
Fig 6.
Fig 7.
V
V
Test circuit for measuring OFF-state leakage current
Test circuit for measuring ON-state leakage current
I
I
= 0.3 V or V
= 0.3 V or V
11.1 Test circuits
V
IL
CC
CC
or V
− 0.3 V; V
− 0.3 V; V
V
V
IH
IH
IL
or V
V
IH
V I
IL
O
O
= V
= open circuit.
CC
V I
− 0.3 V or 0.3 V.
I
S
S
Z
E
Rev. 04 — 27 January 2010
V
CC
S
Z
GND
Y0
Y1
E
V
CC
1
2
GND
Y0
Y1
Low-ohmic single-pole double-throw analog switch
switch
1
2
switch
I
S
V O
switch
1
2
V O
switch
V
V
1
2
S
IH
IL
001aad391
001aad390
V
V
V
V
S
IH
E
IL
IL
IL
V
V
E
IH
IH
NX3L1G53
© NXP B.V. 2010. All rights reserved.
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