SJEP170R550 SEMISOUTH, SJEP170R550 Datasheet - Page 2

• Manufacturer Part Number: SJEP170R550
• Description: JFET, SIC, N-OFF, 1700V, 4A, TO247
• Manufacturer: SEMISOUTH

Specifications of SJEP170R550

• Rohs Compliant: YES
• Transistor Type: JFET
• Breakdown Voltage Vbr: 1700V
• Power Dissipation Pd: 58W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Continuous Drain Current Id: 4A

Off Characteristics
Drain-Source Blocking Voltage
Total Drain Leakage Current
Total Gate Reverse Leakage
On Characteristics
Drain-Source On-resistance
Gate Threshold Voltage
Gate Forward Current
Gate Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance,
energy related
Switching Characteristics
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Turn-on Delay
Rise Time
Turn-off Delay
Fall Time
Turn-on Energy
Turn-off Energy
Total Switching Energy
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ELECTRICAL CHARACTERISTICS
SJEP170R550 Rev 1.4
Parameter
Symbol
R
V
R
BV
I
C
GFWD
C
I
I
C
C
Q
Q
DS(on)
E
E
E
E
GS(th)
R
G(ON)
DSS
GSS
E
E
Q
t
t
t
t
o(er)
on
t
off
t
on
t
off
t
oss
rss
iss
on
off
on
off
r
f
r
f
gs
gd
G
ts
ts
DS
g
V
V
See Figure 14 and application note for
See Figure 14 and application note for
DS
DS
f = 1 MHz, drain-source shorted
= 1700 V, V
V
V
= 1700 V, V
V
gate drive recommendations
gate drive recommendations
Gate Driver = +15V unipolar
Gate Driver = +15V unipolar
DS
DS
V
Inductive Load, T
GS
V
V
Inductive Load, T
V
V
GS
DS
GS
I
I
V
GS
= 1700 V, V
= 1700 V, V
V
V
DS
= -15 V, VDS = 1700V
D
D
DS
DS
DS
>2.7V; See Figure 5
= 850 V, I
= 3 A, V
= 3 A, V
PRELIMINARY
= -15 V, VDS = 0V
= 0 V, I
Rg
Rg
V
Conditions
= 1 V, I
V
= 850 V, I
= 850 V, I
T
= 0 V to 600 V,
Tj = 175
GS
T
V
Tj = 25
V
DD
j
EXT
EXT
2/7
j
= 125 ° C
GS
GS
= 25 ° C
= + 2.5 V
GS
= 300 V
GS
= 20ohm
= 20ohm
= 0 V
= 3 V
D
GS
GS
D
= 0 V, Tj = 175
= 0 V, Tj = 25
= 200 µA
o
D
GS
GS
= 10 mA
o
D
D
C
J
C
= 3 V,
= 3 V,
= 1.5 A,
J
= 3 A,
= 3 A,
= 150
< -15 V,
< -15 V,
= 25
o
o
C
C
o
o
C
C
1700
Min
0.75
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SJEP170R550
Silicon Carbide
Value
-0.02
-0.02
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ
0.45
1.08
1.00
135
170
10
50
10
30
15
20
17
20
12
14
28
30
41
33
74
10
1
8
1
-
February 2011
Max
0.55
1.25
200
-0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
mA
mA
µA
pF
nC
ns
µJ
ns
µJ
V
V