SJDP120R085 SEMISOUTH, SJDP120R085 Datasheet

JFET, SIC, N-ON, 1200V, 27A, TO247

SJDP120R085

Manufacturer Part Number
SJDP120R085
Description
JFET, SIC, N-ON, 1200V, 27A, TO247
Manufacturer
SEMISOUTH
Datasheet

Specifications of SJDP120R085

Rohs Compliant
YES
Transistor Type
JFET
Breakdown Voltage Vbr
1200V
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
27A
On Resistance Rds(on)
0.085ohm
Power Dissipation Pd
114W
(1)
(2)
Continuous Drain Current
Pulsed Drain Current
Short Circuit Withstand Time
Power Dissipation
Gate-Source Voltage
Operating and Storage Temperature
Lead Temperature for Soldering
(3)
Thermal Resistance, junction-to-case
Thermal Resistance, junction-to-ambient
Normally-On Trench Silicon Carbide Power JFET
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No "Tail" Current at 150 ° C
- R
- Voltage Controlled
- Low Gate Charge
- Low Intrinsic Capacitance
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Pulse width limited by maximum junction temperature
Rg
See Figure 13 for gate driver and switching test circuit
SJDP120R085 Rev 1.4
DS(on) typical
(EXT)
= 1 ohm, t
Parameter
of 0.075
p
< 200ns, see Figure 5 for static conditions
(1)
Parameter
Symbol
I
I
D, TC=100
T
D, TC=25
T
V
j
I
t
, T
P
DM
SC
sold
GS
D
stg
PRELIMINARY
V
DD
1/8" from case < 10 s
< 800 V, T
TO-247
Conditions
T
4
1/7
T
T
T
C
Symbol
C
C
j
= 100 ° C
= 25 ° C
AC
R
R
= 25 ° C
= 25 ° C
th,JC
th,JA
(2)
j
< 125 ° C
1
Typ
2
-
-
R
3
DS(ON)max
E
BV
TS,typ
Value
DS
Product Summary
SJDP120R085
-55 to +150
-15 to +15
G(1)
G(1)
Silicon Carbide
Value
114
260
Internal Schematic
27
17
75
50
Max
0.085
1.1
1200
50
290
D(2,4)
D(2,4)
S(3)
S(3)
May 2011
° C / W
Unit
µJ
V
Unit
µs
° C
° C
W
A
A
V

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SJDP120R085 Summary of contents

Page 1

... Pulse width limited by maximum junction temperature ( ohm, t < 200ns, see Figure 5 for static conditions (EXT) p (3) See Figure 13 for gate driver and switching test circuit THERMAL CHARACTERISTICS Parameter Thermal Resistance, junction-to-case Thermal Resistance, junction-to-ambient SJDP120R085 Rev 1.4 PRELIMINARY 4 TO-247 Symbol Conditions ° TC= 100 ° ...

Page 2

... Fall Time Turn-on Energy Turn-off Energy Total Switching Energy Turn-on Delay Rise Time Turn-off Delay Fall Time Turn-on Energy Turn-off Energy Total Switching Energy Total Gate Charge Gate-Source Charge Gate-Drain Charge SJDP120R085 Rev 1.4 PRELIMINARY Symbol Conditions - 600 µ 1200 -15 V, ...

Page 3

... Drain-Source Voltage (V) DS Figure 5. Gate Current I = f(V ); parameter 1.E-03 1.E-04 1.E-05 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 0.0 0.5 1 Gate-Source Voltage (V) GS SJDP120R085 Rev 1.4 PRELIMINARY Figure 2. Typical Output Characteristics GS 2.0 V 1.0 V 0.0 V -1 Figure 4. Typical Transfer Characteristics GS 2.0 V 1.0 V 0.0 V -1 Figure 6 ...

Page 4

... D DS 800 700 150 600 500 400 300 200 E 100 off Drain Current (A) D SJDP120R085 Rev 1.4 PRELIMINARY Figure 8. Drain-Source On-resistance 125 150 175 1E-04 1E-05 C iss 1E-06 1E-07 1E-08 900 1200 (3) Figure 12. Switching Energy Losses = 5 Ω f(R g(EXT) s 800 E ts ...

Page 5

... SJDP120R085 Rev 1.4 PRELIMINARY Figure 13. Inductive Load Switching Circuit Single Switch Configuration Figure 14. Transient Thermal Impedance Z = f(t ); parameter: Duty Ratio th(jc) P 1.E- Pulse Width (s) p 5/7 Silicon Carbide SJDP120R085 1.E-03 1.E-02 1 ...

Page 6

... SJDP120R085 Rev 1.4 PRELIMINARY MILLIMETERS DIM MIN A 4.903 A1 2.273 A2 1.853 b 1.073 b1 2.873 b2 1.903 c 0.600 D 20.823 21.077 D1 17.393 17.647 D2 1.063 e 5.450 E 15.773 16.027 E1 13.893 14.147 L 20.053 L1 4.168 Q 6.043 ØP 3.560 ØP1 7.063 6/7 Silicon Carbide SJDP120R085 INCHES MAX MIN MAX 5.157 0.193 ...

Page 7

... Unless expressly approved in writing by an authorized representative of SemiSouth, SemiSouth products are not designed, authorized or warranted for use in military, aircraft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. SJDP120R085 Rev 1.4 PRELIMINARY 7/7 Silicon Carbide ...

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