NOIS1SM0250A-HHC ON Semiconductor, NOIS1SM0250A-HHC Datasheet

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NOIS1SM0250A-HHC

Manufacturer Part Number
NOIS1SM0250A-HHC
Description
Manufacturer
ON Semiconductor
Datasheet

Specifications of NOIS1SM0250A-HHC

Lead Free Status / Rohs Status
Supplier Unconfirmed
Features
Ordering Information
Refer
©
July, 2011 - Rev. 7
NOIS1SM0250A-HHC
NOIS1SM0250S-HHC
NOIS1SM0250A-HWC
NOIS1SM0250S-HWC
NOIS1SM0250A-WWC
Semiconductor Components Industries, LLC, 2011
512 × 512 active pixels
25 m pixel size
1 inch optical format
Up to 30 frames per second (fps) at full resolution
10-bit analog-to-digital converter (ADC)
Electronic shutter
8 MHz maximum data rate/master clock
3340 V.m
74 dB (5000:1) dynamic range
76 e
4750 e
5V supply voltage
Operating temperature range
Gamma total dose radiation tolerance:
Proton radiation tolerance:
SEL threshold > 80 MeV cm
Mono color filter array
84-pin JLCC package
Less than 350 mW power consumption
0 °C to +65 °C (STAR250)
–40 °C to +85 °C (STAR250BK7)
Increase in average dark current < 1 nA/cm
Image operation with dark signal < 1 V/s after 10 Mrad dem-
onstrated (Co60)
1% of pixels has an increase in dark current > 1 nA/cm
3*10^10 protons at 11.7 MeV
Ordering Code Definition
-
kTC noise
Marketing Part Number
-
/s at RT dark current
2
/W.s sensitivity
3
on page 20 for more information.
mg
-1
Mono with BK7G18 glass
Mono with BK7G18 glass, space qualified
Mono windowless
Mono windowless, space qualified
Mono wafer
2
after 3 MRad
STAR250 250K Pixel Radiation Hard
2
after
Description
1
Applications
Overview
The STAR250 sensor is a CMOS active pixel sensor designed
for application in optical inter-satellite link beam trackers. The
STAR250 is part of broader range of applications including space
borne systems such as sun sensing and star tracking. It features
512 × 512 pixels on a 25 m pitch, on chip fixed pattern noise
(FPN) correction, a programmable gain amplifier, and a 10-bit
ADC. Flexible operating (multiple windowing, subsampling) is
possible by direct addressable X and Y registers.
The sensor has an outstanding radiation tolerance that is
observed using proprietary technology modifications and design
techniques. Two versions of the sensors are available, STAR250
and STAR250BK7. STAR250 has a quartz glass lid and air in the
cavity. The STAR250BK7 has a BK7G18 glass lid with anti
reflective coating. The cavity is filled with N
temperature operating range.
Figure 1. Star250 Photograph
Satellites
Spacecraft monitoring
Nuclear inspection
CMOS Image Sensor
Wafer Sales (production)
NOIS1SM0250A
84-pin JLCC
Publication Order Number:
Package
NOIS1SM0250A/D
2
increasing the

Related parts for NOIS1SM0250A-HHC

NOIS1SM0250A-HHC Summary of contents

Page 1

... Mono color filter array ■ 84-pin JLCC package ■ Less than 350 mW power consumption ■ Ordering Information Marketing Part Number NOIS1SM0250A-HHC NOIS1SM0250S-HHC NOIS1SM0250A-HWC NOIS1SM0250S-HWC NOIS1SM0250A-WWC Refer Ordering Code Definition on page 20 for more information. Semiconductor Components Industries, LLC, 2011 © July, 2011 - Rev. 7 ...

Page 2

... Timing and Readout of Image Sensor ............................11 Image Readout Procedure ..........................................11 Loading the X and Y Start Positions ............................13 Other Signals ...............................................................14 Pinlist .................................................................................15 Package .............................................................................18 Package with Glass .....................................................18 Die Alignment ..............................................................19 Window Specifications ................................................20 Ordering Code Definition..................................................20 Handling Precautions .......................................................20 Limited Warranty .........................................................20 RoHS (Pb-free) Compliance ........................................20 Acceptance Criteria Specification ...................................21 Acronyms ..........................................................................21 Document History Page ...................................................22 Rev www.onsemi.com | Page NOIS1SM0250A ...

Page 3

... Measured local, on central image area 50% of pixels in (typical) the dark Measured in central image area 50% of pixels, at Qsat/2 - 4750 3805 e /s RMS At RT, scale linearly with integration time Horizontal: 0.36 at 600 nm. Vertical: 0.39 Rev www.onsemi.com | Page NOIS1SM0250A Remarks in cavity) 2 Comment Figure 2 and Figure 3 ...

Page 4

... INL none 310 ns To reach 99% of final value 125 ns < 350 mW Average at 8 MHz pixel rate Figure 2. Spectral Response Curve QE 0.4 QE 0.3 600 700 800 Wavelength [nm] Rev www.onsemi.com | Page NOIS1SM0250A Comment QE 0.2 QE 0.1 QE 0.05 QE 0.01 900 1000 1100 ...

Page 5

... The scan is performed both horizontal and vertical. Figure 3. UV Region Spectral Response Curve STAR250 UV-m easurem ent 250 300 350 WaveLength [nm ] Figure 4. Pixel Profile Scan distance [mm] Rev www.onsemi.com | Page NOIS1SM0250A 400 450 QE 100 horizontal pixel profile Vertica pixel profile Imaginary pixel boundaries 100 105 110 500 ...

Page 6

... Criterion 2 after 3 × 10^10 protons at 11.7 MeV Rev www.onsemi.com | Page NOIS1SM0250A Remarks Hand soldering only. The sensor’s temper- ature during soldering should not exceed this limit. Remarks Maximum 1 hour Hand soldering only. The sensor’s temperature during soldering should not exceed this limit ...

Page 7

... Annealing results in a significant dark current decrease. 1,4 1,2 1 0,8 0,6 0,4 0 Figure 6 shows the percentage of pixels with a dark current increase under 11.7 Mev radiation with protons. Figure 6. Percentage of Pixels with Dark Current Increase Figure 5. Dark Current Increase Total Ionizing Dose [Mrad(Si)] Rev www.onsemi.com | Page NOIS1SM0250A 10 12 ...

Page 8

... This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. Take normal precautions to avoid applying any voltages higher than the maximum rated voltages to this high impedance circuit. [1,2,3] Parameter Rev www.onsemi.com | Page NOIS1SM0250A Min Typ Max Units – ...

Page 9

... Pixels Col Sel Rst 512 Column Amplifiers 1024 1024 512 9 X Address Decoder / Shift Register Figure 8. STAR250 Pixel Structure Reset Figure 8 shows an Rev www.onsemi.com | Page NOIS1SM0250A 512 Rst Progr. Gain Amplifier Sig T1 Read T2 T3 Clk_YR SyncYR 10 D9...D0 Clk_ADC Ain Aout ...

Page 10

... Nr. Pixels: Number of pixels read out each line (X). ■ RBT: Row Blanking Time = 3.2 s (typical). ■ Pixel period: 1/8 MHz = 125 ns (typical). ■ Figure 9. Electronic Shutter Reset sequence Frame time Rev www.onsemi.com | Page NOIS1SM0250A Figure 9. The integration time is Reset line Read line x Time axis Integration time ...

Page 11

... The effective integration time tint is calculated as delaylines x line time. The line time is a function of four terms: the time to output the desired number of pixels in the line (Wframe) and the overhead ("blanking") time needed to select a new line and perform the double sampling and reset operations. Rev www.onsemi.com | Page NOIS1SM0250A ...

Page 12

... S and the falling edge on L/R). In this case, the total idle time is minimal. This timing assumes that the Y start register was loaded in advance, which can occur at any time but before the pulse on SYNC_YL or SYNC_YR. Rev www.onsemi.com | Page NOIS1SM0250A T8 Time Available for Read Out of Row Y ...

Page 13

... For example, the X start register can be loaded during the row idle time. The Y start register can be loaded during readout of the last row of the previous frame. If the start address does not change for later frames, it does not need to be reloaded in the register. Rev www.onsemi.com | Page NOIS1SM0250A Figure 12. ...

Page 14

... TESTPIXEL_ARRAY is an array (14x5) of pixels where the photodiodes are connected in parallel. These structures measure the photocurrent of the diodes directly. TESTPIXEL_RESET and TESTPIXEL-OUT are connections to a single pixel that are used for testing. Rev www.onsemi.com | Page NOIS1SM0250A Time Available for Read Out of Row Y T21 T22 Pixel 1 Pixel 2 ...

Page 15

... Apply pulse pattern; see Figure 11 Selects row indicated by left/right shift register high active (1=select row) Apply for normal operation Use left or right shift register for SELECT and RESET 1 = left/0 = right; see Figure 11 Rev www.onsemi.com | Page NOIS1SM0250A Pin Description DD_ADC_DIG Pin Description Pin Description ...

Page 16

... Low first clock period after last active column (low active) End-of-scan of YR shift register Low first clock period after last row (low active) ADC output bit (LSB) ADC output bit ADC output bit Rev www.onsemi.com | Page NOIS1SM0250A Pin Description Figure 11 Pin Description ...

Page 17

... Must be left open for normal operation. Reset input of single test pixel. Must be tied to GND for normal operation. Output of single test pixel. Must be left open for normal operation. Rev www.onsemi.com | Page NOIS1SM0250A Pin Description Pin Description with a 100 nF capacitor for 8 MHz pixel DD DD ...

Page 18

... Note Min and Max limits are not measured on every unit, but guaranteed by assembly process. Figure 13. STAR250 Package Dimensions JLCC-84 Black Alumina BA-914 -6 7.6 × Limits Min Typ Max – – 0.15 –0.05 0 0.05 –0.018 – 0.118 –0.05 0 0.05 –0.05 0 0.05 Rev www.onsemi.com | Page NOIS1SM0250A Units ...

Page 19

... Figure 14. Die Alignment 68 μ Center of Cavity and of FPA Center of Offset Between Center of Silicium Silicium and Center of Cavity μm Die: Glass Window: 0.508+0.01 Drawing Not to Scale Rev www.onsemi.com | Page NOIS1SM0250A Parallelism in X and Y within + 50 μm A 1.0+/-0.05 Window Adhesive: 0.08+0.02 Die Adhesive: 0.08+0.02 ...

Page 20

... A case that the above material, which is used intentionally in the manufacturing process, is contained in or adhered to the inquired product. Rev www.onsemi.com | Page NOIS1SM0250A Material BK7G18 25 × ± 0 ± 0. ...

Page 21

... PLL PLS PRBS PRNU PSN PSNL QC QE QFW RMS ROI Rev www.onsemi.com | Page NOIS1SM0250A Definition megabit per second multifield point CMOS image sensor metal fill factor metal-insulator-metal megapixel megaradiation most significant bit megasamples per second modulation transfer function multiplexer printed circuit board ...

Page 22

... Document History Page Document Title: NOIS1SM0250A STAR250 250K Pixel Radiation Hard CMOS Image Sensor Submission Rev. ECN No. Date ** 310213 See ECN *A 603159 See ECN *B 649360 See ECN *C 2766198 09/19/09 *D 2788268 10/16/2009 *E 2934134 5/20/2010 *F 3104861 12/08/2010 7 N/A 07/07/2011 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifi ...

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