FDP5N60NZ Fairchild Semiconductor, FDP5N60NZ Datasheet - Page 2

• Manufacturer Part Number: FDP5N60NZ
• Description: MOSFET Power 600V N-Channel MOSFET, UniFET-II
• Manufacturer: Fairchild Semiconductor

Specifications of FDP5N60NZ

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.65 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 100 W
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 20 ns
• Gate Charge Qg: 10 nC
• Rise Time: 20 ns
• Lead Free Status / Rohs Status: Details

FDP5N60NZ / FDPF5N60NZ Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 17.3mH, I
3. I
4. Pulse test: Pulse width s,Duty Cycle 
5. Essentially Independent of Operating Temperature Typical Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
SD
Device Marking
DSS
Symbol
J
FDPF5N60NZ
DSS
FDP5N60NZ
4.5A, di/dt  200A/s, V
AS
= 4.5A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
 BV
FDPF5N60NZ
FDP5N60NZ
DSS
Device
G
Parameter
= 25, Starting T
, Starting T
T
J
= 25C
C
= 25
J
= 25C
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250A, V
= 250A, Referenced to 25
/dt = 100A/s
= 25
= 600V, V
= 480V, T
= 0V, I
= ±25V, V
= 20V, I
= 25V, V
= 480V, I
= 10V
= 300V, I
= 0V, I
= V
= 10V, I
DS
Test Conditions
, I
SD
2
SD
D
Reel Size
D
D
GS
GS
D
D
= 4.5A
=2.25A
= 4.5A
GS
C
= 2.25A
DS
= 250A
= 4.5A
= 4.5A
= 125
= 0V
= 0V
-
-
= 0V
= 0V
o
C
o
C
Tape Width
-
-
Min.
600
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
1.65
230
450
0.9
0.6
2.5
50
10
15
20
35
20
5
5
4
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±10
600
7.5
4.5
1.4
5.0
2.0
10
65
13
18
40
50
80
50
1
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
A
A
pF
pF
pF
ns
ns
ns
ns
ns
C
V

A
A
V
V
S
o
C