FDP5N60NZ Fairchild Semiconductor, FDP5N60NZ Datasheet - Page 4

• Manufacturer Part Number: FDP5N60NZ
• Description: MOSFET Power 600V N-Channel MOSFET, UniFET-II
• Manufacturer: Fairchild Semiconductor

Specifications of FDP5N60NZ

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.65 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 100 W
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 20 ns
• Gate Charge Qg: 10 nC
• Rise Time: 20 ns
• Lead Free Status / Rohs Status: Details

FDP5N60NZ / FDPF5N60NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
1.12
1.08
1.04
1.00
0.96
0.92
0.88
0.01
0.1
30
10
1
-80
0.1
-FDPF5N60NZ
vs. Temperature
-40
T
Operation in This Area
is Limited by R
V
J
1
, Junction Temperature
DS
, Drain-Source Voltage [V]
0.01
0
0.1
10
1
10
*Notes:
10
-5
1. T
2. T
3. Single Pulse
0.5
0.2
0.1
0.05
40
0.02
0.01
Single pulse
DS(on)
Figure 11. Transient
C
J
= 150
= 25
10
o
100
80
C
o
-4
C
*Notes:
1. V
2. I
[
o
C
D
GS
120
]
-FDPF5N60NZ
= 250
= 0V
1000 3000
10
100
30
1ms
10ms
DC
-3
Rectangular Pulse Duration [sec]


A

s
s
160
(Continued)
10
-2
Thermal
4
10
Figure 8. On-Resistance Variation
-1
Figure 10. Maximum Drain Current vs.
2.8
2.4
2.0
1.6
1.2
0.8
0.4
5
4
3
2
1
0
Response Curve
*Notes:
25
-80
1. Z
2. Duty Factor, D= t
3. T
P
1

JM
DM
JC
(t) = 3.75
- T
vs. Temperature
-40
Case Temperature
C
50
T
T
= P
J
C
, Junction Temperature
t
, Case Temperature [
1
DM
t
o
10
2
C/W Max.
* Z
0
1

/t
75
JC
2
(t)
40
10
2
100
80
o
*Notes:
C]
1. V
2. I
[
o
C
125
D
www.fairchildsemi.com
]
GS
120
= 2.25A
= 10V
150
160