PSMN011-30YL,115 NXP Semiconductors, PSMN011-30YL,115 Datasheet - Page 2
![MOSFET Power N-Ch 30V Trench MOS logic level FET](/photos/40/31/403123/lfpak_sml.jpg)
PSMN011-30YL,115
Manufacturer Part Number
PSMN011-30YL,115
Description
MOSFET Power N-Ch 30V Trench MOS logic level FET
Manufacturer
NXP Semiconductors
Specifications of PSMN011-30YL,115
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10.7 mOhms
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
36 A
Power Dissipation
49 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Fall Time
5 ns
Gate Charge Qg
7.3 nC
Minimum Operating Temperature
- 55 C
Rise Time
8 ns
Lead Free Status / Rohs Status
Details
Other names
934064949115
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN011-30YL
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN011-30YL
Symbol
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DSM
DGR
GS
tot
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
peak drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
Package
Name
LFPAK; Power-SO8
source
source
source
gate
mounting base; connected to drain
All information provided in this document is subject to legal disclaimers.
Description
plastic single-ended surface-mounted package; 4 leads
Conditions
T
t
T
V
V
pulsed; t
T
T
pulsed; t
V
V
p
j
j
mb
mb
GS
GS
GS
sup
N-channel 10.7 mΩ 30 V TrenchMOS logic level FET in LFPAK
≤ 25 ns; f ≤ 500 kHz; E
≥ 25 °C; T
≥ 25 °C; T
Rev. 2 — 17 May 2011
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
p
p
≤ 10 µs; T
≤ 10 µs; T
Simplified outline
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
Figure 2
SOT669 (LFPAK;
= 25 °C; I
mb
mb
Power-SO8)
1 2 3 4
= 25 °C; see
= 25 °C
DS(AL)
GS
mb
D
= 20 kΩ
= 51 A;
Figure 1
Figure 1
≤ 50 nJ; pulsed
Figure 3
PSMN011-30YL
Graphic symbol
Min
-
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
20
Version
SOT669
Max
30
35
30
36
51
203
49
175
175
51
203
14
D
S
Unit
V
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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