ADG1236YRUZ Analog Devices Inc, ADG1236YRUZ Datasheet - Page 3

• Manufacturer Part Number: ADG1236YRUZ
• Description: IC SWITCH DUAL SPDT 16TSSOP
• Manufacturer: Analog Devices Inc
• Series: iCMOS®r
• Type: Analog Switchr

Specifications of ADG1236YRUZ

• Function: Switch
• Circuit: 2 x SPDT
• On-state Resistance: 260 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 12V, 15V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Analog Switch Type: SPDT
• No. Of Channels: 2
• Bandwidth: 1GHz
• On State Resistance Max: 190ohm
• Turn Off Time: 70ns
• Turn On Time: 125ns
• Supply Voltage Range: 10.8V To 13.2V
• Multiplexer Configuration: Dual SPDT
• Number Of Inputs: 2
• Number Of Outputs: 4
• Number Of Channels: 2
• Analog Switch On Resistance: 475@10.8VOhm
• Analog Switch Turn On Time: 150ns
• Analog Switch Turn Off Time: 190ns
• Package Type: TSSOP
• Power Supply Requirement: Single/Dual
• Single Supply Voltage (typ): 12V
• Dual Supply Voltage (typ): ±15V
• Power Dissipation: 3.5mW
• Supply Current: 0.23mA
• Mounting: Surface Mount
• Pin Count: 16
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Package: 16TSSOP
• Maximum On Resistance: 475@10.8V Ohm
• Maximum Propagation Delay Bus To Bus: 150@±15V|190@12V ns
• Maximum High Level Output Current: 25 mA
• Switch Architecture: SPDT
• Power Supply Type: Single|Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SPECIFICATIONS
DUAL SUPPLY
V
Table 1.
Parameters
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
DD
Analog Signal Range
On Resistance (R
On Resistance Match Between
On Resistance Flatness (R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
Transition Time, t
Transition Time, t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Total Harmonic Distortion + Noise
−3 dB Bandwidth
C
C
S
D
= 15 V ± 10%, V
, C
Channels (∆R
(Off )
S
(On)
INL
ON
ON
TRANS
TRANS
)
or I
)
SS
D
INL
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
INH
S
(Off )
INH
A
B
(Off )
D
OFF
, I
OFF
S
FLAT(ON)
A
(On)
B
2
ON
ON
IN
)
D
25°C
120
190
3.5
6
20
57
±0.02
±0.1
±0.02
±0.1
±0.02
±0.2
0.005
2
125
150
70
90
25
−1
80
85
0.15
1000
1.3
1.6
3.5
4.3
−40°C to
+85°C
230
10
72
±0.6
±0.6
±0.6
Y Version
Rev. 0 | Page 3 of 16
1
−40°C to
+125°C
V
260
12
79
±1
±1
±1
2.0
0.8
±0.1
200
115
10
DD
to V
SS
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
% typ
MHz typ
pF typ
pF max
pF typ
pF max
Test Conditions/Comments
V
V
V
V
V
V
V
V
V
R
V
R
V
R
V
V
R
R
R
R
f = 1 MHz; V
f = 1 MHz; V
f = 1 MHz; V
f = 1 MHz; V
S
DD
S
S
DD
S
S
S
IN
L
S
L
S
L
S1
S
L
L
L
L
= ±10 V, I
= ±10 V, I
= −5 V, 0 V, +5 V; I
= ±10 V, V
= ±10 V, V
= V
= 300 Ω, C
= 10 V; Figure 23
= 300 Ω, C
= 10 V; Figure 23
= 300 Ω, C
= 0 V, R
= 50 Ω, C
= 50 Ω, C
= 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz
= 50 Ω, C
= V
= V
= +13.5 V, V
= +16.5 V, V
D
INL
S2
= ±10 V; Figure 22
= 10 V; Figure 24
or V
S
= 0 Ω, C
S
S
L
L
L
S
S
S
S
S
S
INH
L
L
L
= 5 pF, f = 1 MHz; Figure 26
= 5 pF, f = 1 MHz; Figure 27
= 5 pF; Figure 28
= −1 mA; Figure 20
= −1 mA
= 0 V
= 0 V
= 0 V
= 0 V
=
=
= 35 pF
= 35 pF
= 35 pF
SS
SS
∓
∓
10 V; Figure 21
10 V; Figure 21
= −13.5 V
= −16.5 V
L
S
= 1 nF; Figure 25
= −1 mA
ADG1236
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