M29W320ET70ZE6E Micron Technology Inc, M29W320ET70ZE6E Datasheet - Page 23
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
M29W320ET70ZE6E
Manufacturer Part Number
M29W320ET70ZE6E
Description
Manufacturer
Micron Technology Inc
Datasheet
1.M29W320ET70ZE6E.pdf
(65 pages)
Specifications of M29W320ET70ZE6E
Cell Type
NOR
Density
32Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
22/21Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
4M/2M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W320ET70ZE6E
Manufacturer:
SIEMENS
Quantity:
2
Company:
Part Number:
M29W320ET70ZE6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
M29W320ET70ZE6E
Manufacturer:
ST
Quantity:
20 000
4.5
4.5.1
4.5.2
Fast Program commands
There are two Fast Program commands available to improve the programming throughput,
by writing several adjacent words or bytes in parallel. The Quadruple byte Program
command is available for x8 operations, while the Double word Program command is
available for x16 operations.
Fast Program commands should not be attempted when V
be taken because applying a 12V V
any protected block.
After programming has started, Bus Read operations output the Status register content.
After the program operation has completed the memory will return to the Read mode, unless
an error has occurred. When an error occurs Bus Read operations will continue to output
the Status register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
Note that the Fast Program commands cannot change a bit set at ’0’ back to ’1’. One of the
Erase Commands must be used to set all the bits in a block or in the whole memory from ’0’
to ’1’.
Typical Program times are given in
Endurance cycles
Quadruple byte Program command
The Quadruple byte Program command is used to write a page of four adjacent bytes in
parallel. The four bytes must differ only for addresses A0, DQ15A-1. Five bus write cycles
are necessary to issue the Quadruple byte Program command.
1.
2.
3.
4.
5.
Double word Program command
The Double word Program command is used to write a page of two adjacent words in
parallel. The two words must differ only for the address A0.
Three bus write cycles are necessary to issue the Double word Program command.
1.
2.
3.
The first bus cycle sets up the Quadruple byte Program command.
The second bus cycle latches the Address and the Data of the first byte to be written.
The third bus cycle latches the Address and the Data of the second byte to be written.
The fourth bus cycle latches the Address and the Data of the third byte to be written.
The fifth bus cycle latches the Address and the Data of the fourth byte to be written and
starts the Program/Erase Controller.
The first bus cycle sets up the Double word Program command.
The second bus cycle latches the Address and the Data of the first word to be written.
The third bus cycle latches the Address and the Data of the second word to be written
and starts the Program/Erase Controller.
Table 6: Program, Erase times and Program, Erase
PP
voltage to the VPP/WP pin will temporarily unprotect
PP/
WP is not at V
PP
. Care must
23/65