BAS16H NXP Semiconductors, BAS16H Datasheet - Page 6

• Manufacturer Part Number: BAS16H
• Description: 58T1328
• Manufacturer: NXP Semiconductors

Specifications of BAS16H

• Diode Type: Ultra Fast Recovery
• Forward Current If(av): 215mA
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 4ns
• Rohs Compliant: Yes

NXP Semiconductors
7. Characteristics
BAS16_SER_5
Product data sheet
Table 7.
[1]
[2]
[3]
[4]
[5]
[6]
[7]
Table 8.
T
[1]
[2]
[3]
Symbol
R
Symbol
Per diode
V
I
C
t
V
R
rr
amb
F
FR
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB with 60 m copper strip line.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Single diode loaded.
Soldering point of cathode tab.
Soldering points at pins 4, 5 and 6.
Pulse test: t
When switched from I
When switched from I
= 25 C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Thermal characteristics
Characteristics
BAS16; BAS16H;
BAS16J; BAS16L;
BAS16T; BAS16VV;
BAS16VY; BAS16W;
BAS316
BAS516
Parameter
thermal resistance from
junction to solder point
p
BAS16H
BAS16J
BAS16T
BAS16VY
BAS316
BAS516
300 s;
F
F
Rev. 05 — 25 August 2008
= 10 mA to I
= 10 mA; t
0.02.
r
= 20 ns.
R
= 10 mA; R
…continued
Conditions
I
I
I
I
V
V
V
V
f = 1 MHz; V
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 80 V
= 25 V; T
= 80 V; T
Conditions
L
= 100 ; measured at I
j
j
R
= 150 C
= 150 C
= 0 V
[5][7]
High-speed switching diodes
[6]
[6]
[6]
[6]
[1]
[2]
[3]
BAS16 series
Min
-
-
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Max
70
55
350
260
150
120
Max
715
855
1
1.25
30
0.5
30
50
1.5
1
4
1.75
2
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
Unit
mV
mV
V
V
nA
pF
pF
ns
V
6 of 20
A
A
A