PUMX1 NXP Semiconductors, PUMX1 Datasheet - Page 3

• Manufacturer Part Number: PUMX1
• Description: 58T2164
• Manufacturer: NXP Semiconductors

Specifications of PUMX1

• Module Configuration: Dual
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 100mA
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PUMX1_4
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
Symbol
Per device
R
Symbol
Per transistor
I
I
h
V
f
C
CBO
EBO
T
amb
FE
CEsat
th(j-a)
c
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Pulse test: t
= 25
°
C unless otherwise specified.
Thermal characteristics
Characteristics
Parameter
thermal resistance from junction
to ambient
Parameter
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
Rev. 04 — 20 January 2010
40 V, 100 mA NPN general-purpose double transistor
Conditions
in free air
Conditions
V
I
V
I
T
V
I
V
I
I
I
I
V
f = 100 MHz
V
I
f = 1 MHz
E
E
C
C
C
B
C
E
j
CB
CB
EB
CE
CE
CB
= 0 A
= 0 A;
= 150 °C
= 5 mA
= i
= 0 A
= 1 mA
= 50 mA;
= 2 mA;
= 4 V;
= 30 V;
= 30 V;
= 6 V;
= 12 V;
= 12 V;
e
= 0 A;
[1]
[1]
Min
-
Min
-
-
-
120
-
100
-
Typ
-
Typ
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
PUMX1
Max
416
Max
100
10
100
-
200
-
1.5
Unit
K/W
Unit
nA
μA
nA
mV
MHz
pF
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