BUK9506-40B NXP Semiconductors, BUK9506-40B Datasheet - Page 11

• Manufacturer Part Number: BUK9506-40B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9506-40B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 129 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 92 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 145 ns
• Lead Free Status / Rohs Status: Details
• Other names: BUK9506-40B,127

NXP Semiconductors
8. Revision history
Table 7.
BUK9506-40B
Product data sheet
Document ID
BUK9506-40B v.2
Modifications:
BUK95_9606_40B v.1
Revision history
Release date
20110125
20030514
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•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9506-40B separated from data sheet BUK95_9606_40B v.1.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 January 2011
Data sheet status
Product data sheet
Product data
Change notice
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-
N-channel TrenchMOS logic level FET
BUK9506-40B
Supersedes
BUK95_9606_40B v.1
-
© NXP B.V. 2011. All rights reserved.
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