UPC2771T Renesas Electronics America, UPC2771T Datasheet
UPC2771T
Manufacturer Part Number
UPC2771T
Description
Manufacturer
Renesas Electronics America
Datasheet
1.UPC2771T.pdf
(4 pages)
Specifications of UPC2771T
Lead Free Status / Rohs Status
Supplier Unconfirmed
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The UPC2771T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with f
This amplifier was designed as a driver amplifier for digital
cellular applications. Operating on a 3 volt supply, this IC is
ideally suited for hand-held, portable designs.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
FEATURES
• HIGH GAIN: 20 dB at 900 to 1500 MHz Typical
• HIGH OUTPUT POWER: P
• LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
SYMBOLS
RL
ISOL
OIP3
P
P
RL
I
NF
G
CC
f
SAT
1dB
U
OUT
S
IN
Circuit Current (no signal)
Small Signal Gain,
Upper Limit Operating Frequency (The gain at f
1 dB Compressed Output Power,
Saturated Output Power,
Noise Figure,
Input Return Loss,
Output Return Loss,
Isolation,
SSB OutputThird Order Intercept Point
MEDIUM POWER SI MMIC AMPLIFIER
SAT
= +12.5 dBm at 900 MHz
PARAMETERS AND CONDITIONS
T
+11 dBm at 1500 MHz
approaching 20 GHz.
PACKAGE OUTLINE
PART NUMBER
f = 900 MHz
f = 1500 MHz
f = 900 MHz
f = 1500 MHz
f = 900 MHz
f = 1500 MHz
f = 900 MHz
f = 1500 MHz
f = 900 MHz
f = 1500 MHz
f = 900 MHz
f = 1500 MHz
f = 900 MHz
f = 1500 MHz
f = 900, 902 MHz
f = 1500, 1502 MHz
(T
A
= 25 C, Z
U
is 3 dB down from the gain at 100 MHz)
L
= Z
S
= 50 , V
3V, 2400 MHz
CC
= 3.0 V)
22
20
16
GAIN vs. FREQUENCY AND TEMPERATURE
24
18
14
California Eastern Laboratories
0.1
V
CC
= 3.0 V
T
A
= +25˚ C
0.3
Frequency, f (GHz)
UNITS
GHz
dBm
dBm
dBm
dBm
dBm
dBm
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
T
A
UPC2771T
= +85˚ C
MIN
1.7
6.5
5.5
19
17
+9
+7
10
10
25
25
1.0
+25˚ C
-40˚ C
T
UPC2771T
A
= -40˚ C
+11.5
+12.5
TYP
+9.5
T06
+11
+16
+13
2.1
9.5
8.5
36
21
20
14
14
30
30
+85˚ C
6
6
3.0
MAX
7.5
7.5
45
24
23
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UPC2771T Summary of contents
Page 1
... LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with f T This amplifier was designed as a driver amplifier for digital cellular applications ...
Page 2
ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC I Total Supply Current CC P Input Power Total Power Dissipation T T Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any one ...
Page 3
TYPICAL PERFORMANCE CURVES ISOLATION vs. FREQUENCY 0 -10 -20 -30 -40 -50 0.1 0.3 Frequency, f (GHz) SATURATED OUTPUT POWER vs. FREQUENCY AND VOLTAGE 3 2 ...
Page 4
... MIN ORDERING INFORMATION Note: Embossed Tape wide. · · · Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (Top View) (Bottom View PART NUMBER UPC2771T-E3 3K/Reel · · (408) 988-3500 Telex 34-6393/FAX (408) 988-0279 PRINTED IN USA ON RECYCLED PAPER 11/ OUT QTY ...