HN58V65AP-10 HITACHI, HN58V65AP-10 Datasheet - Page 3

• Manufacturer Part Number: HN58V65AP-10
• Manufacturer: HITACHI

Specifications of HN58V65AP-10

• Lead Free Status / Rohs Status: Not Compliant

HN58V65A Series
HN58V66A Series
64 k EEPROM (8-kword
Ready/Busy Function, RES Function (HN58V66A)
Description
Renesas Technology
programmable EEPROM’s organized as 8192-word
consumption and high relisbility by employing advanced MNOS memory technology and CMOS process
and circuitry technology. They also have a 64-byte page programming function to make their write
operations faster.
Features
Rev.3.00, Dec. 04.2003, page 1 of 26
Single supply: 2.7 to 5.5 V
Access time:
Power dissipation:
Active: 20 mW/MHz (typ)
Standby: 110 W (max)
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (64 bytes): 10 ms (max)
Ready/Busy
Data polling and Toggle bit
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
100 ns (max) at 2.7 V
70 ns (max) at 4.5 V
's
HN58V65A series and HN58V66A series are a electrically erasable and
V
V
CC
CC
< 4.5 V
5.5 V
8-bit)
8-bit. They have realized high speed, low power
(Previous ADE-203-539B (Z) Rev. 2.0)
REJ03C0149-0300Z
Dec. 04. 2003
Rev. 3.00