6AM13 Renesas Electronics America, 6AM13 Datasheet - Page 5

• Manufacturer Part Number: 6AM13
• Manufacturer: Renesas Electronics America
• Type: Power MOSFETr

Specifications of 6AM13

• Number Of Elements: 6
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 10A
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 12
• Package Type: SP-12TA
• Lead Free Status / Rohs Status: Not Compliant

Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Drain to source
breakdown voltage
Gate to source
breakdown voltage
Gate to source leak
current
Zero gate voltage drain
current
Gate to source cutoff
voltage
Static drain to source
on state resistance
Forward transfer
admittance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode
forward voltage
Body to drain diode
reverse recovery time
Note:
Polarity of test conditions for P channel device is reversed.
1. Pulse Test
Symbol
V
V
I
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DF
DS(on)
fs
|
N channel
Min
60
±20
—
—
1.0
—
—
6
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.06
0.08
9.5
860
450
140
10
50
180
110
1.0
120
Max
—
—
±10
250
2.0
0.075 —
0.11
—
—
—
—
—
—
—
—
—
—
P channel
Min
–60
±20
—
—
–1.0
—
5
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.09
0.12
8
1400 —
720
220
15
100
250
160
–1.0
200
Max
—
—
±10
–250 µA
–2.0
0.12
0.18
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
I
V
V
I
I
I
I
V
f = 1 MHz
I
R
I
I
diF/dt = 50 A/µs
D
G
D
D
D
D
D
F
F
GS
DS
DS
L
= 10 A, V
= 10 A, V
= 10 mA, V
= ±100 µA, V
= 1 mA, V
= 5 A, V
= 5 A, V
= 5 A, V
= 5 A, V
= 6
= ±16 V, V
= 50 V, V
= 10 V, V
GS
GS
DS
GS
6AM13
GS
GS
DS
= 10 V*
= 4 V*
= 10 V*
= 10 V,
GS
GS
GS
= 0
= 0,
DS
= 10 V
DS
= 0
= 0,
= 0
= 0
= 0
1
1
1