M29W040B90N6T Micron Technology Inc, M29W040B90N6T Datasheet

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M29W040B90N6T

Manufacturer Part Number
M29W040B90N6T
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29W040B90N6T

Lead Free Status / Rohs Status
Supplier Unconfirmed
M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 55ns
PROGRAMMING TIME
– 10µs per Byte typical
8 UNIFORM 64 Kbytes MEMORY BLOCKS
PLCC32 (K)
TSOP32 (N)
PROGRAM/ERASE CONTROLLER
8 x 20mm
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
TSOP32 (NZ)
8 x 14mm
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
LOW POWER CONSUMPTION
Figure 1. Logic Diagram
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
V CC
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
19
8
– Device Code: E3h
A0-A18
DQ0-DQ7
®
ECOPACK
PACKAGES AVAILABLE
W
M29W040B
E
G
V SS
AI02953
September 2005
1/20

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M29W040B90N6T Summary of contents

Page 1

... YEARS DATA RETENTION – Defectivity below 1 ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: E3h ® ECOPACK PACKAGES AVAILABLE September 2005 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory PLCC32 (K) Figure 1. Logic Diagram A0-A18 M29W040B TSOP32 ( 20mm ...

Page 2

M29W040B Figure 2. PLCC Connections M29W040B DQ0 17 Table 1. Signal Names A0-A18 Address Inputs DQ0-DQ7 Data Inputs/Outputs E Chip Enable G Output Enable W Write Enable V Supply ...

Page 3

Table 2. Absolute Maximum Ratings Symbol Ambient Operating Temperature (Temperature Range Option Ambient Operating Temperature (Temperature Range Option 6) T Temperature Under Bias BIAS T Storage Temperature STG (2) Input or Output Voltage Supply ...

Page 4

... Program or Erase. Protected blocks can be unprotected to allow data to be changed. Block Protection and Blocks Unprotection operations must only be performed on programming equip- ment. For further information refer to Application Note AN1122, Applying Protection and Unprotec- tion to M29 Series Flash Cell Address IL ...

Page 5

COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations will result in ...

Page 6

M29W040B Table 5. Commands Command Addr Data 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase 6 555 Block Erase 6+ ...

Page 7

Block Erase Command. The Block Erase com- mand can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the list ...

Page 8

M29W040B STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Sus- pend when an address within a block being erased is accessed. The bits in ...

Page 9

Figure 4. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL Erase Timer Bit (DQ3). The Erase ...

Page 10

M29W040B Table 8. AC Measurement Conditions Parameter V Supply Voltage CC Load Capacitance ( Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 6. AC Testing Input Output Waveform 3V 0V Table ...

Page 11

Table 10. DC Characteristics ( 70°C or –40 to 85°C) A Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) CC2 (1) Supply Current (Program/Erase) ...

Page 12

M29W040B Table 11. Read AC Characteristics ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC Chip Enable Low ...

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Table 12. Write AC Characteristics, Write Enable Controlled ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Chip Enable Low to Write Enable Low ELWL ...

Page 14

M29W040B Table 13. Write AC Characteristics, Chip Enable Controlled ( 70°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable Low to Chip Enable Low ...

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Table 14. Ordering Information Scheme Example: Device Type M29 Operating Voltage 2.7 to 3.6V CC Device Function 040B = 4 Mbit (512Kb x8), Uniform Block Speed ...

Page 16

M29W040B Table 15. PLCC32 – 32 lead Plastic Leaded Chip Carrier, Package Mechanical Data Symbol Typ 7. 10. 0.89 Figure 11. ...

Page 17

Table 16. TSOP32 – 32 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ 0. Figure 12. TSOP32 – 32 lead Plastic Thin Small ...

Page 18

M29W040B Table 17. TSOP32 – 32 lead Plastic Thin Small Outline 14mm, Package Mechanical Data Symbol Typ 0. Figure 13. TSOP32 – 32 lead Plastic Thin ...

Page 19

Table 18. Revision History Date Rev. July 1999 -01 First Issue I Typ. specification added (Table 10) CC1 21-Sep-1999 -02 I Typ. specification added (Table 10) CC2 Document type: from Preliminary Data to Data Sheet Status Register bit DQ5 clarification ...

Page 20

M29W040B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its ...

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