LH28F160BJHE-BTLTH Sharp Electronics, LH28F160BJHE-BTLTH Datasheet - Page 5

• Manufacturer Part Number: LH28F160BJHE-BTLTH
• Manufacturer: Sharp Electronics

Specifications of LH28F160BJHE-BTLTH

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -25C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

SHARP’s LH28F160BJHE-BTLTH Flash memory is a high-density, low-cost, nonvolatile, read/write storage solution for a
wide range of applications.
LH28F160BJHE-BTLTH can operate at V
capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component
suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code
+ data storage applications.
For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to
DRAM, the LH28F160BJHE-BTLTH offers four levels of protection: absolute protection with V
hardware block locking or flexible software block locking. These alternatives give designers ultimate control of their code
security needs.
The LH28F160BJHE-BTLTH is manufactured on SHARP’s 0.25µm ETOX
standard package: the 48-lead TSOP, ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
Low Voltage Operation
User-Configurable ×8 or ×16 Operation
High-Performance Read Access Time
Operating Temperature
Low Power Management
Optimized Array Blocking Architecture
Extended Cycling Capability
V
90ns(V
-40°C to +85°C
Typ. 2µA (V
Automatic Power Savings Mode Decreases I
Static Mode
Typ. 120µA (V
Read Current
Two 4K-word (8K-byte) Boot Blocks
Six 4K-word (8K-byte) Parameter Blocks
Thirty-one 32K-word (64K-byte) Main Blocks
Bottom Boot Location
Minimum 100,000 Block Erase Cycles
CC
=V
CC
CCW
=2.7V-3.6V)
=2.7V-3.6V Single Voltage
CC
CC
=3.0V) Standby Current
=3.0V, T
16M-BIT ( 1Mbit ×16 / 2Mbit ×8 )
A
Boot Block Flash MEMORY
=+25°C, f=32kHz)
LH28F160BJHE-BTLTH
CC
=2.7V-3.6V and V
CCR
in
CCW
Enhanced Automated Suspend Options
Enhanced Data Protection Features
Automated Block Erase, Full Chip Erase,
Word/Byte Write and Lock-Bit Configuration
SRAM-Compatible Write Interface
Industry-Standard Packaging
ETOX
CMOS Process (P-type silicon substrate)
Not designed or rated as radiation hardened
=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
Absolute Protection with V
Block Erase, Full Chip Erase, Word/Byte Write and
Lock-Bit Configuration Lockout during Power
Transitions
Block Locking with Command and WP#
Permanent Locking
Command User Interface (CUI)
Status Register (SR)
48-Lead TSOP
TM*
TM*
Nonvolatile Flash Technology
process technology. It come in industry-
CCW
CCW
≤V
≤V
CCWLK
CCWLK
, selective
Rev. 1.26