LH28F016SCT-L90 Sharp Electronics, LH28F016SCT-L90 Datasheet - Page 5

• Manufacturer Part Number: LH28F016SCT-L90
• Manufacturer: Sharp Electronics

Specifications of LH28F016SCT-L90

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

sharp
■ SmartVoltage Technology
■ High-Performance Read Access Time
■ Operating Temperature
■ High-Density Symmetrically-Blocked
■ Extended Cycling Capability
■ Industry-Standard Packaging
■ Low Power Management
SHARP’s LH28F016SCT-L90 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile,
read/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage
and extended cycling provide for highly flexible component suitable for resident flash arrays, SIMMs and memory
cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For
secure code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the LH28F016SCT-L90 offers three levels of protection: absolute protection with V
GND, selective hardware block locking, or flexible software block locking. These alternatives give designers
ultimate control of their code security needs.
The LH28F016SCT-L90 is manufactured on SHARP’s 0.38µm ETOX
industry-standard package: the 40-lead TSOP, ideal for board constrained applications. Based on the 28F008SA
architecture, the LH28F016SCT-L90 enables quick and easy upgrades for designs demanding the state-of-the-art.
*ETOX is a trademark of Intel Corporation.
Architecture
2.7V(Read-Only), 3.3V or 5V V
3.3V, 5V or 12V V
90ns(5V±0.25V), 100ns(5V±0.5V),
120ns(3.3V±0.3V), 150ns(2.7V-3.6V)
0°C to +70°C
Thirty-two 64K-byte Erasable Blocks
100,000 Block Erase Cycles
3.2 Million Block Erase Cycles/Chip
40-Lead TSOP
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
CC
in Static Mode
SmartVoltage Flash MEMORY
PP
16M-BIT (2 MB x 8)
LH28F016SCT-L90
CC
LHF16CZA
■ Automated Byte Write and Block Erase
■ Enhanced Automated Suspend Options
■ Enhanced Data Protection Features
■ SRAM-Compatible Write Interface
■ ETOX
■ CMOS Process
■ Not designed or rated as radiation
Technology
(P-type silicon substrate)
hardened
Command User Interface
Status Register
Byte Write Suspend to Read
Block Erase Suspend to Byte Write
Block Erase Suspend to Read
Absolute Protection with V
Flexible Block Locking
Block Erase/Byte Write Lockout
during Power Transitions
TM*
TM
V Nonvolatile Flash
V process technology. It come in
PP
=GND
Rev. 1.2
PP
at
2