LH28F016SUT-10 Sharp Electronics, LH28F016SUT-10 Datasheet - Page 32

• Manufacturer Part Number: LH28F016SUT-10
• Manufacturer: Sharp Electronics

Specifications of LH28F016SUT-10

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 60mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

LH28F016SU
AC Characteristics for CE
NOTES:
CE
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Word/Byte write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of CE
32
SYMBOL
t
t
t
»
T
t
t
t
t
t
t
t
t
t
t
t
t
t
EHQV
EHQV
t
t
t
EHWH
PHWL
DVEH
EHDX
is defined as the latter of CE
AVAV
VPEH
WLEL
AVEH
ELEH
EHAX
EHEL
GHEL
EHRL
RHPL
PHEL
EHGL
QVVL
A
= 0°C to +70°C
1
2
Write Cycle Time
RP
V
WE Setup to CE
Address Setup to CE
Data Setup to CE
CE
Data Hold from CE
Address Hold from CE
WE Hold from CE
CE
Read Recovery before Write
CE
RP
(CSR, GSR, BSR) Data and
RY
RP
Write Recovery before Read
V
(CSR, GSR, BSR) Data and
RY
Duration of Byte Write Operation
Duration of Block Erase Operation
PP
PP
»
»
»
»
»
»
/ BY
»
»
/ BY
Setup to WE Going Low
Pulse Width
Pulse Width High
High to RY
Hold from Valid Status Register
High Recovery to CE
Set up to CE
Hold from Valid Status Register
»
»
High
High
PARAMETER
»
/ BY
»
0
»
or CE
Going Low
»
»
»
Going High
Going High
High
»
»
High
Going Low
»
»
Going High
»
»
1
- Controlled Command Write Operations
High
going Low or the first of CE
»
Going Low
»
for all Command Write Operations.
TYP.
V
CC
8
= 5.0 V ± 0.25 V
»
0
or CE
MIN.
480
100
4.5
0.3
70
50
50
40
10
10
30
60
0
0
0
0
1
0
»
1
going High.
MAX.
100
TYP.
16M (1M × 16, 2M × 8) Flash Memory
V
8
CC
= 5.0 V ± 0.5 V
MIN.
100
480
4.5
0.3
50
10
10
80
50
50
50
80
0
0
0
0
1
0
1
(Continued)
MAX.
100
UNITS NOTE
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
s
2, 6
2, 6
4, 5
3
3
2
2
3
4