TE28F800B3TA110 Intel, TE28F800B3TA110 Datasheet - Page 27
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TE28F800B3TA110
Manufacturer Part Number
TE28F800B3TA110
Description
Manufacturer
Intel
Datasheet
1.TE28F800B3TA110.pdf
(70 pages)
Specifications of TE28F800B3TA110
Cell Type
NOR
Density
8Mb
Access Time (max)
110ns
Interface Type
Parallel
Boot Type
Top
Address Bus
19b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
512K
Supply Current
18mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TE28F800B3TA110
Manufacturer:
INTEL
Quantity:
1 871
Part Number:
TE28F800B3TA110
Manufacturer:
INTEL
Quantity:
20 000
5.0
5.1
5.1.1
Datasheet
Figure 5. 40-Lead TSOP Package for x8 Configurations
Pinout and Signal Descriptions
This section explains the package pinout and signal descriptions.
Signal Pinouts
The B3 flash memory device is available in 40-lead TSOP (x8,
Figure
(x16,
40-Lead and 48-Lead TSOP Packages
NOTES:
1. 40-Lead TSOP available for 8-Mbit and 16-Mbit densities only.
2. Lower densities have NC on the upper address pins. For example, an 8-Mbit device will have NC on Pin 38.
Figure
6), 48-ball BGA(x8 and x16,
4 M
9) packages.
A
A
A
A
A
A
A
A
WE#
RP#
V
WP#
A
A
A
A
A
A
A
A
16
15
14
13
12
11
9
8
PP
18
7
6
5
4
3
2
1
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
Figure 8
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Advanced Boot Block
10 mm x 20 mm
40-Lead TSOP
TOP VIEW
and
Figure
9, respectively), and 48-ball VF BGA
Figure
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
5), 48-lead TSOP (x16,
A
GND
A
A
A
DQ
DQ
DQ
DQ
V
V
NC
DQ
DQ
DQ
DQ
OE#
GND
CE#
A
17
20
19
10
CCQ
CC
0
7
6
5
4
3
2
1
0
16 M
8 M
0580_01
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