E28F016SA-100 Intel, E28F016SA-100 Datasheet - Page 9

• Manufacturer Part Number: E28F016SA-100
• Manufacturer: Intel

Specifications of E28F016SA-100

• Density: 16Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 60mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

2.1 Lead Descriptions
RY/BY#
WP#
BYTE#
3/5#
V
V
GND
NC
PP
CC
Symbol
SEE NEW DESIGN RECOMMENDATIONS
OPEN DRAIN
OUTPUT
SUPPLY
SUPPLY
SUPPLY
INPUT
INPUT
INPUT
Type
(Continued)
READY/BUSY: Indicates status of the internal WSM. When low, it
indicates that the WSM is busy performing an operation. RY/BY# high
indicates that the WSM is ready for new operations (or WSM has
completed all pending operations), or block erase is suspended, or the
device is in deep power-down mode. This output is always active (i.e., not
floated to tri-state off when OE# or CE
RY/BY# Pin Disable command is issued.
WRITE PROTECT: Erase blocks can be locked by writing a nonvolatile
lock-bit for each block. When WP# is low, those locked blocks as
reflected by the Block-Lock Status bits (BSR.6), are protected from
inadvertent data programs or block erases. When WP# is high, all blocks
can be written or erased regardless of the state of the lock-bits. The WP#
input buffer is disabled when RP# transitions low (deep power-down
mode).
BYTE ENABLE: BYTE# low places device in x8 mode. All data is then
input or output on DQ
the high and low byte. BYTE# high places the device in x16 mode, and
turns off the A
address.
3.3/5.0 VOLT SELECT: 3/5# high configures internal circuits for 3.3V
operation. 3/5# low configures internal circuits for 5.0V operation.
Reading the array with 3/5# high in a 5.0V system could damage the
device.
There is a significant delay from 3/5# switching to valid data.
ERASE/PROGRAM POWER SUPPLY: For erasing memory array blocks
or writing words/bytes/pages into the flash array.
DEVICE POWER SUPPLY (3.3V ± 10%, 5.0V ± 10%, 5.0V ± 5%):
Do not leave any power pins floating.
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NO CONNECT:
Lead may be driven or left floating.
0
input buffer. Address A
0–7
, and DQ
Name and Function
NOTES:
8–15
float. Address A
0
#,CE
1
then becomes the lowest order
1
# are high), except if a
0
selects between
28F016SA
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