MT48LC8M16A2P-6A Micron Technology Inc, MT48LC8M16A2P-6A Datasheet - Page 43
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT48LC8M16A2P-6A
Manufacturer Part Number
MT48LC8M16A2P-6A
Description
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet
1.MT48LC8M16A2P-6A.pdf
(74 pages)
Specifications of MT48LC8M16A2P-6A
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
5.4ns
Maximum Clock Rate
167MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
165mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48LC8M16A2P-6A
Manufacturer:
MT
Quantity:
162
Part Number:
MT48LC8M16A2P-6A
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT48LC8M16A2P-6A AIT:L
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT48LC8M16A2P-6A IT:L
Manufacturer:
MICRON
Quantity:
250
Company:
Part Number:
MT48LC8M16A2P-6A:L
Manufacturer:
MICRON
Quantity:
7 660
Part Number:
MT48LC8M16A2P-6A:L
Manufacturer:
MICRON/美光
Quantity:
20 000
Part Number:
MT48LC8M16A2P-6AG
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT48LC8M16A2P-6AIT
Manufacturer:
NXP
Quantity:
23 000
Part Number:
MT48LC8M16A2P-6AIT:L
Manufacturer:
MICRON/美光
Quantity:
20 000
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with
11. Does not affect the state of the bank and acts as a NOP to that bank.
5. The following states must not be interrupted by any executable command; COMMAND
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle.
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid
9. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regard-
INHIBIT or NOP commands must be applied on each positive clock edge during these states.
Refreshing:
Accessing mode
register:
Precharging all:
state for precharging.
less of bank.
auto precharge enabled and READs or WRITEs with auto precharge disabled.
Starts with registration of an AUTO REFRESH command and ends
when
idle state.
Starts with registration of a LMR command and ends when
has been met. After
idle state.
Starts with registration of a PRECHARGE ALL command and ends
when
43
t
t
RC is met. After
RP is met. After
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
MRD is met, the SDRAM will be in the all banks
t
t
RC is met, the SDRAM will be in the all banks
RP is met, all banks will be in the idle state.
128Mb: x4, x8, x16 SDRAM
©1999 Micron Technology, Inc. All rights reserved.
Operations
t
MRD