TLP621-2GBT Toshiba, TLP621-2GBT Datasheet - Page 3
TLP621-2GBT
Manufacturer Part Number
TLP621-2GBT
Description
Manufacturer
Toshiba
Datasheet
1.TLP621-2GBT.pdf
(10 pages)
Specifications of TLP621-2GBT
Input Type
DC
Output Type
DC
Output Device
Transistor
Number Of Elements
2
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Forward Current
50mA
Collector-emitter Voltage
55V
Package Type
PDIP
Collector Current (dc) (max)
50mA
Isolation Voltage
5000Vrms
Power Dissipation
150mW
Collector-emitter Saturation Voltage
0.4V
Current Transfer Ratio
600%
Pin Count
8
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
•
•
Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no. 40009302
(Note)
Creepage distance
Clearance
Insulation thickness
Maximum operating insulation voltage: 890 V
Highest permissible over voltage: 8000 V
When a EN 60747-5-2 approved type is needed, please designate the “Option (D4)”
: 6.4 mm (min.)
: 6.4 mm (min.)
: 0.4 mm (min.)
7.62 mm pich
standard type
10.16 mm pich
(LF2) type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
PK
PK
3
TLP621,TLP621−2,TLP621−4
2007-10-01