TLP621-2GBT Toshiba, TLP621-2GBT Datasheet - Page 9

TLP621-2GBT

Manufacturer Part Number
TLP621-2GBT
Description
Manufacturer
Toshiba
Datasheet

Specifications of TLP621-2GBT

Input Type
DC
Output Type
DC
Output Device
Transistor
Number Of Elements
2
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Forward Current
50mA
Collector-emitter Voltage
55V
Package Type
PDIP
Collector Current (dc) (max)
50mA
Isolation Voltage
5000Vrms
Power Dissipation
150mW
Collector-emitter Saturation Voltage
0.4V
Current Transfer Ratio
600%
Pin Count
8
Mounting
Through Hole
Operating Temp Range
-25C to 85C
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
0.05
0.03
100
100
0.5
0.3
0.1
0.3
0.5
0.1
10
50
30
30
10
50
1
5
3
0.3
1
5
3
Ta = 25°C
-20
Ambient temperature T
Sample A
V CE = 5V
V CE = 0.4V
1
Forward current I
0
20
I F = 0.5mA
3
I
I
C
25mA
C
Sample B
10mA
– T
5mA
– I
1mA
40
F
a
10
F
V CE = 5V
60
(mA)
a
(°C)
30
80
100
100
9
1000
0.20
0.16
0.04
0.12
0.08
500
100
100
300
500
300
50
10
10
30
50
30
3
5
0
5
1
0.3
1
I F = 5mA
I C = 1mA
Ta = 25°C
I F = 16mA
V CC = 5V
-20
TLP621,TLP621−2,TLP621−4
Sample B
Sample A
Ambient temperature T
3
1
Load resistance R
Forward current I
0
Switchingtime – R
V
20
CE
3
10
I
C /
t OFF
t ON
t s
(sat) – T
I
F
40
– I
Ta = 25°C
30
10
F
F
a
L
60
V CE = 5V
V CE = 0.4V
(mA)
L
a
(kΩ)
(°C)
30
100
80
2007-10-01
100
100
300

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