CY7C1339B-133AI Cypress Semiconductor Corp, CY7C1339B-133AI Datasheet - Page 5

no-image

CY7C1339B-133AI

Manufacturer Part Number
CY7C1339B-133AI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1339B-133AI

Density
4Mb
Access Time (max)
4ns
Operating Supply Voltage (typ)
3.3V
Package Type
TQFP
Operating Temp Range
-40C to 85C
Supply Current
375mA
Operating Supply Voltage (min)
3.13V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
32b
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1339B-133AI
Manufacturer:
CYPRESS
Quantity:
1 831
Document #: 38-05141 Rev. *A
Introduction
Functional Overview
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock.
Maximum access delay from the clock rise (t
(166-MHz device).
The CY7C1339B supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium and i486
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is user
selectable, and is determined by sampling the MODE input.
Accesses can be initiated with either the Processor Address
Strobe (ADSP) or the Controller Address Strobe (ADSC).
Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.
Byte Write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW
Enable (GW) overrides all Byte Write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed Write circuitry.
Three synchronous Chip Selects (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. ADSP is ignored if
CE
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
CE
signals (GW, BWE) are all deserted HIGH. ADSP is ignored if
CE
(A
Address Register while being presented to the memory core.
The corresponding data is allowed to propagate to the input of
the Output Registers. At the rising edge of the next clock the
data is allowed to propagate through the output register and
onto the data bus within 3.5 ns (166-MHz device) if OE is
active LOW. The only exception occurs when the SRAM is
emerging from a deselected state to a selected state, its
outputs are always three-stated during the first cycle of the
access. After the first cycle of the access, the outputs are
controlled by the OE signal. Consecutive single Read cycles
are supported. Once the SRAM is deselected at clock rise by
the chip select and either ADSP or ADSC signals, its output
will three-state immediately.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) CE
presented to A
address advancement logic while being delivered to the RAM
core. The Write signals (GW, BWE, and BW
inputs are ignored during this first cycle.
ADSP-triggered Write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
[16:0]
1
1
1
, CE
is HIGH.
is HIGH. The address presented to the address inputs
1
) is stored into the address advancement logic and the
, CE
2
, CE
2
, CE
[16:0]
3
are all asserted active, and (3) the Write
3
is loaded into the address register and the
are all asserted active. The address
[3:0]
) inputs. A Global Write
1
, CE
2
, CE
[3:0]
CO
) and ADV
) is 3.5 ns
3
) and an
data presented to the DQ
sponding address location in the RAM core. If GW is HIGH,
then the Write operation is controlled by BWE and BW
signals. The CY7C1339B provides Byte Write capability that
is described in the Write Cycle Descriptions table. Asserting
the Byte Write Enable input (BWE) with the selected Byte
Write (BW
bytes. Bytes not selected during a Byte Write operation will
remain unaltered. A synchronous self-timed Write mechanism
has been provided to simplify the Write operations.
Because the CY7C1339B is a common I/O device, the Output
Enable (OE) must be deserted HIGH before presenting data
to the DQ
drivers. As a safety precaution, DQ
three-stated whenever a Write cycle is detected, regardless of
the state of OE.
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following condi-
tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deserted HIGH, (3) CE
(4) the appropriate combination of the Write inputs (GW, BWE,
and BW
desired byte(s). ADSC-triggered Write accesses require a
single clock cycle to complete. The address presented to
A
advancement logic while being delivered to the RAM core. The
ADV input is ignored during this cycle. If a global Write is
conducted, the data presented to the DQ
corresponding address location in the RAM core. If a Byte
Write is conducted, only the selected bytes are written. Bytes
not selected during a Byte Write operation will remain
unaltered. A synchronous self-timed Write mechanism has
been provided to simplify the Write operations.
Because the CY7C1339B is a common I/O device, the Output
Enable (OE) must be deserted HIGH before presenting data
to the DQ
drivers. As a safety precaution, DQ
three-stated whenever a Write cycle is detected, regardless of
the state of OE.
Burst Sequences
The CY7C1339B provides a two-bit wraparound counter, fed
by A
sequence. The interleaved burst sequence is designed specif-
ically to support Intel Pentium applications. The linear burst
sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user selectable
through the MODE input.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both Read and Write burst operations are supported.
Interleaved Burst Sequence
A
00
01
10
11
[16:0]
[1:0]
Address
[1:0]
First
is loaded into the address register and the address
, that implements either an interleaved or linear burst
[3:0]
[3:0]
[31:0]
[31:0]
) are asserted active to conduct a Write to the
) input will selectively write to only the desired
A
01
00
11
10
inputs. Doing so will three-state the output
inputs. Doing so will three-state the output
[1:0]
Address
Second
1
, CE
[31:0]
2
, CE
inputs is written into the corre-
A
10
11
00
01
[1:0]
3
Address
are all asserted active, and
Third
[31:0]
[31:0]
[31:0]
CY7C1339B
are automatically
are automatically
is written into the
A
11
10
01
00
Page 5 of 17
[1:0]
Address
Fourth
[3:0]

Related parts for CY7C1339B-133AI