CY7C1347B-100AI Cypress Semiconductor Corp, CY7C1347B-100AI Datasheet - Page 8

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CY7C1347B-100AI

Manufacturer Part Number
CY7C1347B-100AI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1347B-100AI

Density
4.5Mb
Access Time (max)
5.5ns
Operating Supply Voltage (typ)
3.3V
Package Type
TQFP
Operating Temp Range
-40C to 85C
Supply Current
325mA
Operating Supply Voltage (min)
3.14V
Operating Supply Voltage (max)
3.63V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Lead Free Status / Rohs Status
Not Compliant
Write Cycle Description
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
Ambient Temperature with
Power Applied
Supply Voltage on V
DC Voltage Applied to Outputs
in High Z State
DC Input Voltage
Notes:
4.
5.
6.
7.
8.
Read
Read
Write Byte 0 - DQ
Write Byte 1 - DQ
Write Bytes 1, 0
Write Byte 2 - DQ
Write Bytes 2, 0
Write Bytes 2, 1
Write Bytes 2, 1, 0
Write Byte 3 - DQ
Write Bytes 3, 0
Write Bytes 3, 1
Write Bytes 3, 1, 0
Write Bytes 3, 2
Write Bytes 3, 2, 0
Write Bytes 3, 2, 1
Write All Bytes
Write All Bytes
X = “Don't Care,” 1 = Logic HIGH, 0 = Logic LOW.
The SRAM always initiates a read cycle when ADSP asserted, regardless of the state of GW, BWE, or BW
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is
a don't care for the remainder of the write cycle.
OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQ
inactive or when the device is deselected, and DQ
Minimum voltage equals 2.0V for pulse durations of less than 20 ns.
T
A
is the case temperature.
[7]
[7]
Function
[7:0]
[15:8]
[23:16]
[31:24]
DD
Relative to GND
[4, 5, 6]
0.5V to V
0.5V to V
[31:0]
65 C to +150 C
55 C to +125 C
0.5V to +4.6V
;DP
[3:0]
DD
DD
GW
= data when OE is active.
+ 0.5V
+ 0.5V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
8
BWE
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Com’l
Ind’l
Range
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
X
–40 C to +85 C
Temperature
0 C to +70 C
BW
Ambient
X
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
X
3
[3:0]
. Writes may occur only on subsequent clocks
[8]
BW
X
X
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
2
5%/+10%
3.3V
V
[31:0]
DD
CY7C1347B
;DP
BW
X
X
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
[3:0]
1
= High-Z when OE is
3.3V /+10%
2.5V 5%
V
DDQ
BW
X
X
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0

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