TE28F256J3C125 Intel, TE28F256J3C125 Datasheet - Page 31
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TE28F256J3C125
Manufacturer Part Number
TE28F256J3C125
Description
Manufacturer
Intel
Datasheet
1.TE28F256J3C125.pdf
(72 pages)
Specifications of TE28F256J3C125
Cell Type
NOR
Density
256Mb
Access Time (max)
125ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
25/24Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
32M/16M
Mounting
Surface Mount
Pin Count
56
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TE28F256J3C125
Manufacturer:
INTEL
Quantity:
5 510
Company:
Part Number:
TE28F256J3C125
Manufacturer:
TSOP
Quantity:
4 800
Company:
Part Number:
TE28F256J3C125SL7HD
Manufacturer:
SANREX
Quantity:
210
8.0
8.1
8.2
8.3
Datasheet
Power and Reset Specifications
This section provides an overview of system level considerations for the Intel StrataFlash
memory family device. This section provides a brief description of power-up, power-down,
decoupling and reset design considerations.
Power-Up/Down Characteristics
In order to prevent any condition that may result in a spurious write or erase operation, it is
recommended to power-up and power-down VCC and VCCQ together. It is also recommended to
power-up VPEN with or slightly after VCC. Conversely, VPEN must power down with or slightly
before VCC.
Power Supply Decoupling
When the device is enabled, many internal conditions change. Circuits are energized, charge pumps
are switched on, and internal voltage nodes are ramped. All of this internal activities produce
transient signals. The magnitude of the transient signals depends on the device and system loading.
To minimize the effect of these transient signals, a 0.1 µF ceramic capacitor is required across each
VCC/VSS and VCCQ
connections.
Additionally, for every eight flash devices, a 4.7 µF electrolytic capacitor should be placed between
VCC and VSS at the power supply connection. This 4.7 µF capacitor should help overcome
voltage slumps caused by PCB (printed circuit board) trace inductance.
Reset Characteristics
By holding the flash device in reset during power-up and power-down transitions, invalid bus
conditions may be masked. The flash device enters reset mode when RP# is driven low. In reset,
internal flash circuitry is disabled and outputs are placed in a high-impedance state. After return
from reset, a certain amount of time is required before the flash device is able to perform normal
operations. After return from reset, the flash device defaults to asynchronous page mode. If RP# is
driven low during a program or erase operation, the program or erase operation will be aborted and
the memory contents at the aborted block or address are no longer valid. See
Waveform for Reset Operation” on page 29
signal
. Capacitors should be placed as close as possible to device
for detailed information regarding reset timings.
256-Mbit J3 (x8/x16)
Figure 14, “AC
®
31