PDTC123JE NXP Semiconductors, PDTC123JE Datasheet - Page 4

• Manufacturer Part Number: PDTC123JE
• Manufacturer: NXP Semiconductors

Specifications of PDTC123JE

• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 100
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-416
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
2004 Aug 13
V
V
V
V
I
I
P
T
T
T
R
O
CM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
tot
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
th j-a
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
positive
negative
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
PARAMETER
PARAMETER
open emitter
open base
open collector
T
note 1
note 1
note 1
note 1
notes 1
notes 1 and 2
notes 2 and 3
amb
≤ 25 °C
4
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
CONDITIONS
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
PDTC123J series
250
500
500
625
833
500
500
50
50
10
+12
−5
100
100
500
250
250
200
150
250
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
UNIT