MRF19060 Freescale Semiconductor, MRF19060 Datasheet

no-image

MRF19060

Manufacturer Part Number
MRF19060
Description
Manufacturer
Freescale Semiconductor
Type
RF MOSFETr
Datasheet

Specifications of MRF19060

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-volt
65V
Gate-source Voltage (max)
15V
Power Dissipation
180W
Operating Temperature Classification
Military
Mounting
Screw
Pin Count
3
Package Type
NI-780
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF19060
Manufacturer:
MOT
Quantity:
40
Part Number:
MRF19060S
Manufacturer:
QUALCOMM
Quantity:
2 049
 Freescale Semiconductor, Inc., 2004. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier
applications.
• Typical CDMA Performance: 1960 MHz, 26 Volts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1930 MHz, 60 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power
Derate above 25°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 7.5 Watts
Power Gain — 12.5 dB
Adjacent Channel Power —
885 kHz: - 47 dBc @ 30 kHz BW
1.25 MHz: - 55 dBc @ 12.5 kHz BW
2.25 MHz: - 55 dBc @ 1 MHz BW
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
MRF19060SR3
LATERAL N - CHANNEL
MRF19060R3
CASE 465A - 06, STYLE 1
RF POWER MOSFETs
1990 MHz, 60 W, 26 V
CASE 465 - 06, STYLE 1
MRF19060R3 MRF19060SR3
M3 (Minimum)
1 (Minimum)
- 65 to +150
MRF19060SR3
- 0.5, +65
- 0.5, +15
MRF19060R3
Value
Value
Class
1.03
0.97
NI - 780S
180
200
NI - 780
Rev. 7, 12/2004
MRF19060
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
1

Related parts for MRF19060

MRF19060 Summary of contents

Page 1

... RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF19060R3 CASE 465A - 06, STYLE 780S MRF19060SR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc GS P 180 W D 1.03 W/° +150 °C stg T 200 °C J Symbol Value Unit R 0.97 °C/W θJC Class 1 (Minimum) M3 (Minimum) MRF19060R3 MRF19060SR3 1 ...

Page 2

... W CW 1990 MHz) DD out Output Mismatch Stress ( Vdc CW 500 mA, DD out 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) 1. Part is internally matched both on input and output. MRF19060R3 MRF19060SR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS g fs VGS ...

Page 3

... Z1 0.580″ x 0.074″ Microstrip Z2 0.100″ x 0.074″ Microstrip Z3 0.384″ x 0.074″ Microstrip RF Device Data Freescale Semiconductor Z10 Z11 Z12 DUT Figure 1. MRF19060 Test Circuit Schematic Z13 Z14 Z15 Z16 Z17 Z18 C11 C12 Z4 0.152″ x 0.140″ Microstrip Z5 0.090″ ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF19060 Test Circuit Component Layout MRF19060R3 MRF19060SR3 4 ...

Page 5

... Order 5th Order 7th Order 1 OUTPUT POWER (WATTS) PEP out versus Output Power = 500 IMD DRAIN VOLTAGE (VOLTS) DD MRF19060R3 MRF19060SR3 −20 −30 −40 −50 −60 −70 −80 −90 −100 20 100 −22 −24 −26 −28 −30 −32 −34 −36 −38 ...

Page 6

... Z Z Figure 9. Series Equivalent Source and Load Impedance MRF19060R3 MRF19060SR3 Ω load f = 1930 MHz 1990 MHz Z source f = 1930 MHz 500 mA PEP DD DQ out source load MHz Ω Ω 1930 1.65 - j0.67 1.85 + j0.50 1960 1.64 - j0.45 1.89 + j0.74 1990 1.60 - j0.20 1 ...

Page 7

... REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE F MRF19060R3 MRF19060SR3 9.91 4.32 1.14 0.15 1.70 5.33 3.51 9.53 9.52 9.91 4.32 1.14 0.15 1.70 5.33 9.53 9.52 1.02 ...

Page 8

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF19060R3 MRF19060SR3 Document Number: MRF19060 Rev. 7, 12/2004 8 RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts ...

Related keywords