HAT2022R-EL Renesas Electronics America, HAT2022R-EL Datasheet - Page 3
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HAT2022R-EL
Manufacturer Part Number
HAT2022R-EL
Description
Manufacturer
Renesas Electronics America
Type
Power MOSFETr
Datasheet
1.HAT2022R-EL.pdf
(9 pages)
Specifications of HAT2022R-EL
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.015Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
11A
Power Dissipation
2.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOP
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HAT2022R-EL
Manufacturer:
HITACHI/日立
Quantity:
20 000
Company:
Part Number:
HAT2022R-EL-E
Manufacturer:
HI
Quantity:
2 500
Part Number:
HAT2022R-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
HAT2022R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.12.00 Sep 07, 2005 page 1 of 6
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
8
7
6
5
1 2
3 4
G
4
D
5 6 7 8
S S S
1 2 3
D D D
1, 2, 3
4
5, 6, 7, 8
(Previous: ADE-208-440J)
REJ03G1158-1200
Source
Gate
Drain
Sep 07, 2005
Rev.12.00