PS2581L2-E3 Renesas Electronics America, PS2581L2-E3 Datasheet - Page 3

• Manufacturer Part Number: PS2581L2-E3
• Manufacturer: Renesas Electronics America

Specifications of PS2581L2-E3

• Lead Free Status / Rohs Status: Supplier Unconfirmed

<R>
Document No. PN10239EJ04V0DS (4th edition)
Date Published December 2008 NS
Printed in Japan
DESCRIPTION
silicon phototransistor in a plastic DIP (Dual In-line Package).
FEATURES
• Long creepage and clearance distance (8 mm)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (V
• High-speed switching (t
• High current transfer ratio (CTR = 200% TYP.)
• Safety standards
APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
The PS2581L1, PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN
Creepage distance and clearance of leads are over 8 millimeters.
The PS2581L2 is lead bending type (Gull-wing) for surface mounting.
• UL approved: No. E72422
• CSA approved: No. CA101391
• BSI approved: No. 8243/8244
• NEMKO approved: No. P97103006
• DEMKO approved: No. 314523
• SEMKO approved: No. 714542
• FIMKO approved: No. FI 23944
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE
r
= 3
μ
s TYP., t
CEO
The mark <R> shows major revised points.
= 80 V)
f
4-PIN PHOTOCOUPLER
= 5
μ
s TYP.)
DATA SHEET
PS2581L1,PS2581L2
PIN CONNECTION
4
1
PHOTOCOUPLER
(Top View)
3
2
−NEPOC Series−
1. Anode
2. Cathode
3. Emitter
4. Collector
1997, 2008