PS2532L-1-E3 Renesas Electronics America, PS2532L-1-E3 Datasheet - Page 8

• Manufacturer Part Number: PS2532L-1-E3
• Manufacturer: Renesas Electronics America

Specifications of PS2532L-1-E3

• Lead Free Status / Rohs Status: Supplier Unconfirmed

TYPICAL CHARACTERISTICS (T
8
100 n
100 p
0.01
10 n
10 µ
150
100
100
0.1
1 n
1 µ
Remark The graphs indicate nominal characteristics.
50
10
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
0
1
0.6
–50
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
V
CE
= 300 V
25
FORWARD CURRENT vs.
FORWARD VOLTAGE
–25
0.8
Ambient Temperature T
T
Ambient Temperature T
A
= +100 ˚C
Forward Voltage V
50
+75 ˚C
+50 ˚C
0
1.0
75
25
1.5 mW/˚C
1.2
100
50
F
+25 ˚C
(V)
–25 ˚C
–55 ˚C
A
A
A
(˚C)
(˚C)
0 ˚C
= 25 °C, unless otherwise specified)
1.4
125
75
Data Sheet PN10232EJ02V0DS
150
100
1.6
400
300
200
100
160
140
120
100
500
100
0.5
0.1
80
60
40
20
50
10
0
0
5
1
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
0.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector Saturation Voltage V
1
Collector to Emitter Voltage V
0.2
25
Ambient Temperature T
2
4.5 mA
0.4
50
PS2532-1,PS2532L-1
3
0.6
75
4
3.0 mW/˚C
5
100
0.8
I
F
A
= 0.5 mA
(˚C)
CE(sat)
6
CE
125
1.0
(V)
(V)
7
150
1.2
8