UPD434008ALE-15 Renesas Electronics America, UPD434008ALE-15 Datasheet

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UPD434008ALE-15

Manufacturer Part Number
UPD434008ALE-15
Description
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPD434008ALE-15

Density
4Mb
Access Time (max)
15ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
19b
Package Type
SOJ
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
170mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
36
Word Size
8b
Number Of Words
512K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD434008ALE-15
Manufacturer:
CYPRESSRESS
Quantity:
2 000
Part Number:
UPD434008ALE-15
Manufacturer:
NEC
Quantity:
1 040
Document No. M12226EJ6V0DS00 (6th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
Description
Features
• 524,288 words by 8 bits organization
• Fast access time : 12, 15, 17, 20 ns (MAX.)
• Output Enable input for easy application
• Single +5.0 V power supply
Ordering Information
µ PD434008ALE-12
µ PD434008ALE-15
µ PD434008ALE-17
µ PD434008ALE-20
The µ PD434008A is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM.
Operating supply voltage is 5.0 V ± 0.5 V.
The µ PD434008A is packaged in 36-pin plastic SOJ.
Part number
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
36-pin plastic SOJ
(10.16 mm (400))
4M-BIT CMOS FAST SRAM
Package
512K-WORD BY 8-BIT
DATA SHEET
Access time
ns (MAX.)
12
15
17
20
MOS INTEGRATED CIRCUIT
µ µ µ µ PD434008A
At operating
Supply current mA (MAX.)
200
170
160
150
At standby
10
1996

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UPD434008ALE-15 Summary of contents

Page 1

... Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. M12226EJ6V0DS00 (6th edition) Date Published December 2002 NS CP(K) Printed in Japan DATA SHEET MOS INTEGRATED CIRCUIT 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT Package Access time ns (MAX.) 36-pin plastic SOJ 12 (10 ...

Page 2

Pin Configuration /xxx indicates active low signal /CS I/O1 I/ GND I/O3 I/O4 / Remark Refer to Package Drawing for the 1-pin index mark. 2 36-pin plastic SOJ ...

Page 3

Block Diagram A0 | A18 I/O1 | I/O8 /CS /OE / GND Truth Table /CS /OE /WE × × × Remark × : Don’t care Memory cell array 4,194,304 ...

Page 4

Electrical Specifications Absolute Maximum Ratings Parameter Symbol Supply voltage Input / Output voltage Operating ambient temperature Storage temperature Note –2.0 V (MIN.) (pulse width : 2 ns) Caution Exposing the device to stress above those listed in Absolute Maximum Rating ...

Page 5

DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) Parameter Symbol Input leakage current I LI Output leakage current I LO Operating supply current I CC Standby supply current SB1 High level output voltage V OH Low level ...

Page 6

AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) AC Test Conditions Input Waveform (Rise and Fall Time ≤ ≤ ≤ ≤ 3 ns) 3.0 V GND Output Waveform Output Load AC characteristics directed with the note should be measured with ...

Page 7

Read Cycle Parameter Read cycle time Address access time /CS access time /OE access time Output hold from address change /CS to output in low impedance /OE to output in low impedance /CS to output in high impedance /OE to ...

Page 8

Read Cycle Timing Chart 2 (/CS Access) Address (Input) /CS (Input) /OE (Input) High-Z I/O (Output) Caution Address valid prior to or coincident with /CS low level input. Remark In read cycle, /WE should be fixed to high level. 8 ...

Page 9

Write Cycle Parameter Write cycle time /CS to end of write Address valid to end of write Write pulse width Data valid to end of write Data hold time Address setup time Write recovery time /WE to output in high ...

Page 10

Write Cycle Timing Chart 2 (/CS Controlled) Address (Input) /CS (Input) /WE (Input) I/O (Input) Caution /CS or /WE should be fixed to high level during address transition. Remark Write operation is done during the overlap time of a low ...

Page 11

Package Drawing 36-PIN PLASTIC SOJ (10.16 mm (400 NOTE Each lead centerline is located within 0. its true position (T.P.) at maximum material condition ...

Page 12

Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the µ PD434008A. Type of Surface Mount Device µ PD434008ALE : 36-pin plastic SOJ (10.16 mm (400)) 12 Data Sheet M12226EJ6V0DS µ µ µ µ PD434008A ...

Page 13

MEMO ] Data Sheet M12226EJ6V0DS µ µ µ µ PD434008A 13 ...

Page 14

MEMO ] 14 Data Sheet M12226EJ6V0DS µ µ µ µ PD434008A ...

Page 15

NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation ...

Page 16

The information in this document is current as of December, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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