AO8801 Alpha & Omega Semiconductor Inc, AO8801 Datasheet

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... R , low gate charge and operation DS(ON) with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications ESD protected. Standard Product AO8801 is Pb- free (meets ROHS & Sony 259 specifications). TSSOP-8 Top View D2 D1 ...

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... AO8801 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

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... AO8801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -4.5V -8V -3. -2. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd -2. =-1. 1.6 V =-1.8V GS 1.4 1.2 V =-2.5V GS 1.0 V =-4.5V GS 0.8 ...

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... AO8801 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =-10V =-4. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=T /(T + θJA θJA J, =90°C/W θJA 1 0.1 ...