SI4336DY-T1 Vishay, SI4336DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4336DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4336DY-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.00325Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 17A
• Power Dissipation: 1.6W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72417
S-70316-Rev. D, 12-Feb-07
0.005
0.004
0.003
0.002
0.001
0.000
0.1
50
10
1
6
5
4
3
2
1
0
0.00
0
0
Source-Drain Diode Forward Voltage
V
I
5
D
DS
On-Resistance vs. Drain Current
0.2
= 20 A
V
= 15 V
10
SD
T
10
Q
J
g
= 150 °C
- Source-to-Drain Voltage (V)
-
0.4
I
15
D
Total Gate Charge (nC)
V
Gate Charge
GS
-
20
Drain Current (A)
= 4.5 V
20
0.6
25
30
30
0.8
T
J
V
= 25 °C
GS
35
40
1.0
= 10 V
40
1.2
45
50
0.015
0.012
0.009
0.006
0.003
0.000
7000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
C
GS
= 25 A
rss
= 10 V
V
V
2
T
6
DS
GS
J -
0
-
-
Junction Temperature (°C)
Gate-to-Source Voltage (V)
Drain-to-Source Voltage (V)
25
Capacitance
C
12
oss
4
I
D
50
C
Vishay Siliconix
= 25 A
iss
18
75
6
Si4336DY
100
www.vishay.com
24
8
125
150
10
30
3