SI4336DY-T1 Vishay, SI4336DY-T1 Datasheet - Page 3

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SI4336DY-T1

Manufacturer Part Number
SI4336DY-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI4336DY-T1

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.00325Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
17A
Power Dissipation
1.6W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI4336DY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72417
S-70316-Rev. D, 12-Feb-07
0.005
0.004
0.003
0.002
0.001
0.000
0.1
50
10
1
6
5
4
3
2
1
0
0.00
0
0
Source-Drain Diode Forward Voltage
V
I
5
D
DS
On-Resistance vs. Drain Current
0.2
= 20 A
V
= 15 V
10
SD
T
10
Q
J
g
= 150 °C
- Source-to-Drain Voltage (V)
-
0.4
I
15
D
Total Gate Charge (nC)
V
Gate Charge
GS
-
20
Drain Current (A)
= 4.5 V
20
0.6
25
30
30
0.8
T
J
V
= 25 °C
GS
35
40
1.0
= 10 V
40
1.2
45
50
0.015
0.012
0.009
0.006
0.003
0.000
7000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
C
GS
= 25 A
rss
= 10 V
V
V
2
T
6
DS
GS
J -
0
-
-
Junction Temperature (°C)
Gate-to-Source Voltage (V)
Drain-to-Source Voltage (V)
25
Capacitance
C
12
oss
4
I
D
50
C
Vishay Siliconix
= 25 A
iss
18
75
6
Si4336DY
100
www.vishay.com
24
8
125
150
10
30
3

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