SI4336DY-T1 Vishay, SI4336DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI4336DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4336DY-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.00325Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 17A
• Power Dissipation: 1.6W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Si4336DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10 -
- 25
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
I
D
J
= 250 µA
- Temperature (°C)
25
10 -
3
50
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
0.0
100
1
10 -
*Limited by
r
2
DS(on)
*V
Safe Operating Area, Junction-to-Case
125
GS
>
Square Wave Pulse Duration (sec)
V
150
minimum V
DS
0.1
Single Pulse
T
- Drain-to-Source Voltage (V)
C
10 -
= 25 °C
1
GS
at which r
1
DS(on)
60
50
40
30
20
10
1
10
0
10 -
is specified
2
10 ms
100 ms
1 s
10 s
dc
10 -
100
1
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (sec)
1
-
T
t
1
A
= P
S-70316-Rev. D, 12-Feb-07
t
2
Document Number: 72417
DM
Z
thJA
10
thJA
100
t
t
1
2
(t)
= 67 °C/W
100
600
600