TPC8016H Toshiba, TPC8016H Datasheet - Page 3

• Manufacturer Part Number: TPC8016H
• Manufacturer: Toshiba
• Type: Power MOSFETr

Specifications of TPC8016H

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0057Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 15A
• Power Dissipation: 1.9W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
= 15 A, V
(Ta = 25°C)
= ±16 V, V
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 24 V, V
∼ − 24 V, V
∼ − 24 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
= 10 μs
GS
GS
GS
= 1 mA
= 7.5 A
DS
= 7.5 A
= 7.5 A
⎯
= 0 V
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
DD
= 7.5 A
D
∼ − 15 V
D
D
= 15 A
= 15 A
= 15 A
V
OUT
12.5
Min
Min
1.1
30
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2380
Typ.
12.2
15.6
Typ.
410
980
5.5
3.7
9.8
7.2
25
21
15
60
46
26
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPC8016-H
2006-11-16
−1.2
Max
Max
±10
2.3
7.5
5.7
10
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
A
V