PMBD914 NXP Semiconductors, PMBD914 Datasheet - Page 4

Single high-speed switching diode, fabricated in planar technology, and encapsulated in asmall Surface-Mounted Device (SMD) plastic package

PMBD914

Manufacturer Part Number
PMBD914
Description
Single high-speed switching diode, fabricated in planar technology, and encapsulated in asmall Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBD914

Rectifier Type
Switching Diode
Configuration
Single
Peak Rep Rev Volt
100V
Avg. Forward Curr (max)
0.215A
Rev Curr
0.025uA
Peak Non-repetitive Surge Current (max)
4A
Forward Voltage
1.25V
Operating Temp Range
-65C to 150C
Package Type
TO-236AB
Rev Recov Time
4ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / Rohs Status
Compliant

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NXP Semiconductors
PMBD914_6
Product data sheet
Fig 1.
Fig 3.
(nA)
(1) T
(2) T
(3) T
I
(1) V
(2) V
(3) V
(mA )
R
300
200
100
I
10
10
10
10
F
10
0
5
4
3
2
0
Forward current as a function of forward
voltage
0
Reverse current as a function of junction
temperature
amb
amb
amb
R
R
R
= 75 V; maximum values
= 75 V; typical values
= 25 V; typical values
= 150 C; typical values
= 25 C; typical values
= 25 C; maximum values
(1)
(1)
(2)
(3)
100
1
(2)
T
V
(3)
j
F
( C )
(V)
mbg382
mga884
Rev. 06 — 11 February 2009
200
2
Fig 2.
Fig 4.
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
1
0
2
1
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; maximum values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
0
j
= 25 C; prior to surge
10
4
Single high-speed switching diode
amb
= 25 C
10
8
2
PMBD914
10
12
© NXP B.V. 2009. All rights reserved.
3
t
V
p
R
( s)
mbg704
mbg446
(V)
10
16
4
4 of 10

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