PHT4NQ10LT NXP Semiconductors, PHT4NQ10LT Datasheet
PHT4NQ10LT
Specifications of PHT4NQ10LT
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PHT4NQ10LT Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: PHT4NQ10LT in SOT223. 2. Features TrenchMOS™ technology Fast switching Low on-state resistance Surface mount package Logic level compatible. ...
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... T = 100 pulsed Figure Figure unclamped inductive load 3 0.2 ms starting Figure unclamped inductive load Figure Rev. 01 — 11 September 2000 PHT4NQ10LT Typ Max Unit 100 V 3.5 A 6.9 W 150 C 200 250 m Min Max Unit 100 V 100 3 +150 C 65 +150 C 3 3.5 A © Philips Electronics N.V. 2000. All rights reserved. ...
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... Fig 2. Normalized continuous drain current as a function of solder point temperature. 03ac48 µs 100 µ 100 Unclamped inductive load starting T GS Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. Rev. 01 — 11 September 2000 PHT4NQ10LT 03aa25 120 100 100 125 150 ...
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... N-channel enhancement mode field-effect transistor Conditions mounted on a printed-circuit board; minimum footprint th(j-sp) (K/ 0.5 0.2 0.1 1 0.05 0. single pulse pulse duration. Rev. 01 — 11 September 2000 PHT4NQ10LT Value Unit Figure 5 18 150 03ac84 (s) © Philips Electronics N.V. 2000. All rights reserved. K/W K ...
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... 1.75 A; Figure 8 and 150 3.5 A; Figure 3 Figure MHz; Figure 3 Figure 3 /dt = 100 Rev. 01 — 11 September 2000 PHT4NQ10LT Min Typ Max Unit 100 130 0 250 A 10 100 nA 9 200 250 m 575 m 8.5 S 12.2 nC 1.1 nC 3.6 nC 374 0.87 1 100 nC © Philips Electronics N.V. 2000. All rights reserved. ...
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... C and 150 Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ac86 T = 25º 2. ( --------------------------- - R Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 11 September 2000 PHT4NQ10LT 03ac87 10 V > DSon 150º 25º 0 ...
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... Fig 11. Sub-threshold drain current as a function of gate-source voltage. 03ac88 = 25ºC j 150º ( MHz DSon GS Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 11 September 2000 PHT4NQ10LT 03aa36 ( min typ max 0.5 1 1 03ac90 iss ...
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... Product specification N-channel enhancement mode field-effect transistor 03ac89 ( 25º ( 3 Fig 15. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 11 September 2000 PHT4NQ10LT 03ac91 º (nC © Philips Electronics N.V. 2000. All rights reserved ...
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... 6.7 3.7 7.3 1.1 4.6 2.3 6.3 3.3 6.7 0.7 REFERENCES JEDEC EIAJ SC-73 Rev. 01 — 11 September 2000 PHT4NQ10LT detail 0.95 0.2 0.1 0.1 0.85 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2000. All rights reserved. ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20000911 - Product specification; initial version 9397 750 07342 Product specification N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 PHT4NQ10LT © Philips Electronics N.V. 2000. All rights reserved ...
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... Rev. 01 — 11 September 2000 PHT4NQ10LT Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 01 — 11 September 2000 PHT4NQ10LT © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 September 2000 Document order number: 9397 750 07342 N-channel enhancement mode field-effect transistor Printed in The Netherlands PHT4NQ10LT ...