UPA2706GR-E2 Renesas Electronics America, UPA2706GR-E2 Datasheet - Page 3

• Manufacturer Part Number: UPA2706GR-E2
• Manufacturer: Renesas Electronics America

Specifications of UPA2706GR-E2

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Document No. G16236EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
DESCRIPTION
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
The PA2706GR is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
applications of notebook computers.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
Low on-state resistance
R
R
Low C
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
3. Starting T
iss
PA2706GR
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
= 15 m MAX. (V
= 22.5 m
: C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
iss
= 660 pF TYP. (V
10 s, Duty Cycle
ch
MAX. (V
Note1
= 25°C, V
Note3
Note3
DS
A
GS
GS
= 25°C)
= 0 V)
GS
= 0 V)
= 10 V, I
DD
= 4.5 V, I
DS
N-CHANNEL POWER MOS FET
= 15 V, R
= 10 V, V
Note2
1%
Power SOP8
PACKAGE
D
= 5.5 A)
D
A
= 5.5 A)
G
= 25°C, All terminals are connected)
GS
DATA SHEET
= 25
I
D(pulse)
I
V
V
= 0 V)
D(DC)
E
T
SWITCHING
T
I
P
DSS
GSS
AS
stg
ch
AS
T
, L = 100 H, V
2
x 2.2 mm
MOS FIELD EFFECT TRANSISTOR
55 to + 150
12.1
150
2.0
30
11
20
11
44
GS
PACKAGE DRAWING (Unit: mm)
= 20
8
1
5.37 MAX.
0.40
mJ
°C
°C
1.27
W
V
V
A
A
A
0 V
+0.10
–0.05
0.78 MAX.
5
4
PA2706GR
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1, 2, 3
4
5, 6, 7, 8 ; Drain
0.5 ±0.2
6.0 ±0.3
4.4
; Source
; Gate
Source
Drain
0.8
Body
Diode
0.10
2003