FDQ7238S Fairchild Semiconductor, FDQ7238S Datasheet - Page 5

• Manufacturer Part Number: FDQ7238S
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDQ7238S

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics : Q2
0.01
100
0.1
10
10
1
8
6
4
2
0
0.001
0.01
Figure 9. Maximum Safe Operating Area.
0.01
0
Figure 7. Gate Charge Characteristics.
0.1
R
SINGLE PULSE
0.0001
I
1
D
R
DS(ON)
= 14A
θJA
V
T
GS
A
= 94
= 25
= 10V
LIMIT
D = 0.5
o
o
C/W
10
C
0.2
0.1
0.05
0.1
0.02
V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
Q
g
0.001
, GATE CHARGE (nC)
20
Thermal characterization performed using the conditions described in Note 1d.
DC
Transient thermal response will change depending on the circuit board design
1
10s
Figure 11. Transient Thermal Response Curve.
1s
30
100ms
V
DS
10ms
0.01
= 10V
10
20V
1ms
40
100us
15V
100
50
0.1
t
1
, TIME (sec)
4000
3200
2400
1600
800
50
40
30
20
10
0
0
0.01
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
5
0.1
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
10
C
C
C
1
OSS
RSS
t
ISS
1
, TIME (sec)
15
Duty Cycle, D = t
P(pk
T
R
J
R
θJA
- T
10
θJA
(t) = r(t) * R
A
t
20
= 94 C/W
1
= P * R
100
t
2
SINGLE PULSE
R
θJA
T
θJA
100
FDQ7238S Rev A1 (W)
A
1
= 94 C/W
θJA
25
= 25 C
(t)
/ t
V
f = 1MHz
2
GS
= 0 V
1000
1000
30