FDQ7238S Fairchild Semiconductor, FDQ7238S Datasheet - Page 6

• Manufacturer Part Number: FDQ7238S
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDQ7238S

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics : Q2
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDQ7238S Q2.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without
SyncFET(FDS6644).
Figure 12. FDQ7238S SyncFET body diode
reverse recovery characteristic.
Figure 13. Non-SyncFET (FDS6644) body
diode reverse recovery characteristic.
TIME : 12nS/div
TIME : 12.5nS/div
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage. This
will increase the power dissipated in the device.
0.00001
0.0001
0.001
0.01
0.1
0
5
V
DS
10
, REVERSE VOLTAGE (V)
T
T
T
A
A
A
= 125
= 100
= 25
15
o
C
o
o
C
C
20
FDQ7238S Rev A1 (W)
25
30