TEA5767HL NXP Semiconductors, TEA5767HL Datasheet - Page 24

• Manufacturer Part Number: TEA5767HL
• Manufacturer: NXP Semiconductors

Specifications of TEA5767HL

• Operating Temperature Classification: Commercial
• Package Type: LQFP
• Product Depth (mm): 7mm
• Product Length (mm): 7mm
• Operating Supply Voltage (typ): 3V
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
Notes
1. Calculation of this 14-bit word can be done as follows:
2. V
3. LOW side and HIGH side selectivity can be switched by changing the mixer from HIGH side to LOW side LO injection.
2004 Sep 13
B
Tuning mute
SYMBOL
US
mute
mute(L)
mute(R)
Low-power FM stereo radio for
handheld applications
formula for HIGH side injection:
where:
N = decimal value of PLL word
f
f
f
when externally clocked with 6.5 MHz.
Example for receiving a channel at 100 MHz with HIGH side injection:
The PLL word becomes 2FCAH.
RF
IF
ref
-
RF
DRIVEN MUTE FUNCTIONS
= the intermediate frequency [Hz] = 225 kHz
= the reference frequency [Hz] = 32.768 kHz for the 32.768 kHz crystal; f
= the wanted tuning frequency [Hz]
in Fig.7 is replaced by V
V
V
V
AFL
AFL
AFR
and V
muting depth
muting depth
PARAMETER
AFR
muting depth data byte 1 bit 7 = 1
RF1
N
+ V
=
RF2
4
--------------------------------- -
. The radio is tuned to 98 MHz (HIGH side injection).
data byte 3 bit 1 = 1;
f
data byte 3 bit 2 = 1;
f
AF
AF
f
RF
f
= 1 kHz; R
= 1 kHz; R
ref
+
f
IF
CONDITIONS
; formula for LOW side injection:
load(L)
load(R)
23
< 30 k
< 30 k
N
=
4
------------------------------------------------------------------
ref
MIN.
= 50 kHz for the 13 MHz crystal or
100
N
32768
10
TYP.
=
6
4
--------------------------------- -
+
225
TEA5767HL
Product specification
f
f
RF
ref
60
80
80
10
MAX.
–
3
f
IF
=
12234
dB
dB
dB
UNIT
.