BGB741L7ESDE6327XT Infineon Technologies, BGB741L7ESDE6327XT Datasheet - Page 8

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BGB741L7ESDE6327XT

Manufacturer Part Number
BGB741L7ESDE6327XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BGB741L7ESDE6327XT

Pin Count
6
Lead Free Status / Rohs Status
Compliant

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6.2
The measurement setup is a test fixture with Bias-T’s in a 50
Figure 4
Table 6
Parameter
Minimum Noise Figure
Noise Figure in 50
Transducer Gain
Maximum Stable Power Gain
Input 1 dB Gain compression point
Input 3
Input Return Loss
Output Return Loss
1) Test fixture losses extracted
2) Test fixture losses extracted
3) Measured on an application board according to figure 2) presenting roughly a 50
Data Sheet
quiescent current, that is at small RF input power level. I
In
rd
Order Intercept Point
AC Characteristics
BGB741L7ESD testing setup
AC Characteristics, V
System
Bias-T
1)
VB
2)
3
2
1
3)
C
= 3 V,
Symbol
NF
NF
|S
G
IP
IIP
R.L.
R.L.
RF-In
Bias-
VCC
ms
Out
21
1dB
min
50
3
in
out
f
= 150 MHz
Top View
Min.
GND
C
8
increases as RF input power level approaches P1dB.
7
Typ.
1.05
0.95
1.1
1.05
19
21
20
21.5
-5.5
-8
5.5
3.5
14
18
12.5
18.5
Values
Current
system, T
Control
RF-Out
On/Off
Adjust
Max.
A
6
5
4
= 25 °C.
system to the device. I
VC
Unit
dB
dB
dB
dB
dBm
dBm
dB
dB
Bias-T
Electrical Characteristics
Note /
Test Condition
Z
I
I
Z
I
I
I
I
Z
I
I
I
I
I
I
I
I
I
I
Rev. 1.0, 2009-04-17
C
C
C
C
C
C
C
C
Cq
Cq
C
C
C
C
C
C
S
S
L
BGB741L7ESD
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
= 6 mA
= 10 mA
=
=
=
= 6 mA
= 10 mA
Z
Z
Z
Lopt
Sopt
L
= 50
Cq
,
is the
Z
Out
S
=
Z
Sopt

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